Ravi M. Todi, Ph.D.
Affiliations: | 2007 | University of Central Florida, Orlando, FL, United States |
Area:
Electronics and Electrical Engineering, Materials Science EngineeringGoogle:
"Ravi Todi"Parents
Sign in to add mentorKalpathy B. Sundaram | grad student | 2007 | University of Central Florida | |
(Gate stack and channel engineering: Study of metal gates and germanium channel devices.) |
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Publications
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Todi VO, Shantheyanda BP, Todi RM, et al. (2011) Optical characterization of BCN films deposited at various N2/Ar gas flow ratios by RF magnetron sputtering Materials Science and Engineering B-Advanced Functional Solid-State Materials. 176: 878-882 |
Savchyn O, Todi RM, Coffey KR, et al. (2010) High-temperature optical properties of sensitized Er3+ in Si-rich SiO2 – implications for gain performance Optical Materials. 32: 1274-1278 |
Savchyn O, Todi RM, Coffey KR, et al. (2009) Excitation wavelength independent sensitized Er3+ concentration in as-deposited and low temperature annealed Si-rich SiO2 films Applied Physics Letters. 95: 231109 |
Savchyn O, Todi RM, Coffey KR, et al. (2009) Observation of temperature-independent internal Er3+ relaxation efficiency in Si-rich SiO2 films Applied Physics Letters. 94: 241115 |
Vijayakumar A, Warren AP, Todi RM, et al. (2009) Photoluminescence from RF sputtered SiCBN thin films Journal of Materials Science: Materials in Electronics. 20: 144-148 |
Simoen E, Sonde S, Claeys C, et al. (2008) Processing Factors Impacting the Leakage Current and Flicker Noise of Germanium p + -n Junctions on Silicon Substrates Journal of the Electrochemical Society. 155 |
Warren AP, Todi RM, Yao B, et al. (2008) On the phase identification of dc magnetron sputtered Pt–Ru alloy thin films Journal of Vacuum Science and Technology. 26: 1208-1212 |
Savchyn O, Kik PG, Todi RM, et al. (2008) Effect of hydrogen passivation on luminescence-center-mediated Er excitation in Si-richSiO2with and without Si nanocrystals Physical Review B. 77 |
Savchyn O, Todi RM, Coffey KR, et al. (2008) Multilevel sensitization of Er3+ in low-temperature-annealed silicon-rich SiO2 Applied Physics Letters. 93: 233120 |
Vijayakumar A, Todi RM, Warren AP, et al. (2008) Influence of N2/Ar gas mixture ratio and annealing on optical properties of SiCBN thin films prepared by rf sputtering Diamond and Related Materials. 17: 944-948 |