Seth M. Hubbard, Ph.D.
Affiliations: | 2005 | University of Michigan, Ann Arbor, Ann Arbor, MI |
Area:
Electronics and Electrical EngineeringGoogle:
"Seth Hubbard"Parents
Sign in to add mentor| Dimitris Pavlidis | grad student | 2005 | University of Michigan | |
| (Metalorganic vapor phase epitaxy (MOVPE) growth and characterization of III-nitride heterostructures for application in electronic devices.) | ||||
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Publications
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| D'Rozario JR, Polly SJ, Nelson GT, et al. (2022) Modeling free-carrier absorption in ultrathin III-V solar cells with light management. Optics Express. 30: 7096-7109 |
| Poplawsky JD, Dutta P, Guthrey HL, et al. (2020) Directly Linking Low Angle Grain Boundary Misorientation to Device Functionality for GaAs Grown on Flexible Metal Substrates. Acs Applied Materials & Interfaces |
| Khatiwada D, Favela CA, Sun S, et al. (2020) High‐efficiency single‐junction p‐i‐n GaAs solar cell on roll‐to‐roll epi‐ready flexible metal foils for low‐cost photovoltaics Progress in Photovoltaics |
| Welser RE, Polly SJ, Kacharia M, et al. (2019) Design and Demonstration of High-Efficiency Quantum Well Solar Cells Employing Thin Strained Superlattices. Scientific Reports. 9: 13955 |
| Fedorenko A, Baboli MA, Mohseni PK, et al. (2019) Design and Simulation of the Bifacial III-V-Nanowire-on-Si Solar Cell Mrs Advances. 4: 929-936 |
| Dutta P, Rathi M, Khatiwada D, et al. (2019) Flexible GaAs solar cells on roll-to-roll processed epitaxial Ge films on metal foils: a route towards low-cost and high-performance III–V photovoltaics Energy & Environmental Science. 12: 756-766 |
| Baboli MA, Slocum MA, Kum H, et al. (2019) Improving pseudo-van der Waals epitaxy of self-assembled InAs nanowires on graphene via MOCVD parameter space mapping Crystengcomm. 21: 602-615 |
| Pokharel N, Smaglik N, Ahrenkiel P, et al. (2019) Orientations of Al4C3 and Al films grown on GaAs substrates Materials Science in Semiconductor Processing. 98: 49-54 |
| McClure EL, Hubbard SM. (2019) The effects of silicon substrate thickness and annealing temperature on surface coverage for aluminum-induced crystallization of germanium films Materials Science in Semiconductor Processing. 94: 22-27 |
| Haque MD, Kamata N, Sato S, et al. (2018) Characterization of nonradiative recombination centers in proton-irradiated InAs/GaAs quantum dots by two-wavelength-excited photoluminescence Japanese Journal of Applied Physics. 57: 92302 |