Brent P. Gila
Affiliations: | University of Florida, Gainesville, Gainesville, FL, United States |
Area:
Materials Science EngineeringGoogle:
"Brent Gila"Parents
Sign in to add mentorCammy Abernathy | grad student | 2000 | UF Gainesville (Physics Tree) | |
(Growth and characterization of dielectric materials for wide bandgap semiconductors.) |
Children
Sign in to add traineeAndrew P. Gerger | grad student | 2009 | UF Gainesville |
Yu-Lin Wang | grad student | 2009 | UF Gainesville |
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Publications
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Xian M, Fares C, Ren F, et al. (2019) Effect of thermal annealing for W/β-Ga2O3 Schottky diodes up to 600 °C Journal of Vacuum Science & Technology B. 37: 061201 |
Fares C, Ren F, Lambers E, et al. (2019) Valence and conduction band offsets for sputtered AZO and ITO on (010) (Al0.14Ga0.86)2O3 Semiconductor Science and Technology. 34: 025006 |
Fares C, Ren F, Lambers E, et al. (2019) Valence- and Conduction-Band Offsets for Atomic-Layer-Deposited Al2O3 on (010) (Al0.14Ga0.86)2O3 Journal of Electronic Materials. 48: 1568-1573 |
Fares C, Ren F, Lambers E, et al. (2018) Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3 Ecs Journal of Solid State Science and Technology. 7: P519-P523 |
Fares C, Ren F, Hays DC, et al. (2018) Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3 Ecs Journal of Solid State Science and Technology. 8: Q3001-Q3006 |
Fares C, Ren F, Lambers E, et al. (2018) Band alignment of atomic layer deposited SiO2 on (010) (Al0.14Ga0.86)2O3 Journal of Vacuum Science & Technology B. 36: 061207 |
Fares C, Ren F, Hays DC, et al. (2018) Valence band offsets for CuI on (-201) bulk Ga2O3 and epitaxial (010) (Al0.14Ga0.86)2O3 Applied Physics Letters. 113: 182101 |
Carey PH, Ren F, Hays DC, et al. (2017) Band alignment of atomic layer deposited SiO2and HfSiO4with $(\bar{2}01)$ β-Ga2O3 Japanese Journal of Applied Physics. 56: 071101 |
Ren F, Pearton SJ, Kang TS, et al. (2017) Use of sub-bandgap optical pumping to identify defects in AlGaN/GaN high electron mobility transistors (Conference Presentation) Proceedings of Spie. 10104 |
Carey PH, Ren F, Hays DC, et al. (2017) Conduction and valence band offsets of LaAl2O3 with (−201) β-Ga2O3 Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 041201 |