Walid M. Hafez, Ph.D.
Affiliations: | 2005 | University of Illinois, Urbana-Champaign, Urbana-Champaign, IL |
Area:
Electronics and Electrical EngineeringGoogle:
"Walid Hafez"Parents
Sign in to add mentor| Milton Feng | grad student | 2005 | UIUC | |
| (Submicron scaling of indium phosphide/indium gallium arsenide heterojunction bipolar transistors toward terahertz bandwidths.) | ||||
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Publications
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| Snodgrass W, Wu B, Hafez W, et al. (2006) Graded base type-II InP/GaAsSb DHBT with f/sub T/=475 GHz Ieee Electron Device Letters. 27: 84-86 |
| Snodgrass W, Wu BR, Hafez W, et al. (2006) Performance enhancement of composition-graded-base type-II InP∕GaAsSb double-heterojunction bipolar transistors with fT>500GHz Applied Physics Letters. 88: 222101 |
| Hafez W, Snodgrass W, Feng M. (2005) 12.5 nm base pseudomorphic heterojunction bipolar transistors achieving fT=710GHz and fMAX=340GHz Applied Physics Letters. 87: 252109 |
| Hafez W, Feng M. (2005) Experimental demonstration of pseudomorphic heterojunction bipolar transistors with cutoff frequencies above 600GHz Applied Physics Letters. 86: 152101 |
| Lai JW, Hafez W, Feng M. (2004) VERTICAL SCALING OF TYPE I InP HBT WITH FT > 500 GHZ International Journal of High Speed Electronics and Systems. 14: 625-631 |
| Feng M, Holonyak N, Hafez W. (2004) Light-emitting transistor: Light emission from InGaP/GaAs heterojunction bipolar transistors Applied Physics Letters. 84: 151-153 |
| Hafez W, Feng M. (2004) Lateral scaling of 0.25 μm InP/InGaAs SHBTs with InAs emitter cap Electronics Letters. 40: 1151-1153 |
| Hafez W, Lai J, Feng M. (2003) Vertical scaling of 0.25-μm emitter InP/InGaAs single heterojunction bipolar transistors with f/sub T/ of 452 GHz Ieee Electron Device Letters. 24: 436-438 |
| Hafez W, Lai J, Feng M. (2003) Low-power high-speed operation of submicron InP-InGaAs SHBTs at 1 mA Ieee Electron Device Letters. 24: 427-429 |
| Hafez W, Lai J, Feng M. (2003) Submicron InP-InGaAs single heterojunction bipolar transistors with f/sub T/ of 377 GHz Ieee Electron Device Letters. 24: 292-294 |