Brett A. Hull, Ph.D.
Affiliations: | 2004 | Pennsylvania State University, State College, PA, United States |
Area:
Materials Science Engineering, Electronics and Electrical EngineeringGoogle:
"Brett Hull"Parents
Sign in to add mentor| Suzanne Mohney | grad student | 2004 | Penn State | |
| (An investigation of the processing and properties of ohmic contacts to p-type aluminum gallium nitride.) | ||||
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Publications
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| Lichtenwalner DJ, Sabri S, Brunt EV, et al. (2020) Accelerated Testing of SiC Power Devices under High-Field Operating Conditions Materials Science Forum. 1004: 992-997 |
| Brunt Ev, O’Loughlin M, Burk A, et al. (2019) Industrial and Body Diode Qualification of Gen-III Medium Voltage SiC MOSFETs: Challenges and Solutions Materials Science Forum. 963: 805-810 |
| Lichtenwalner DJ, Sabri S, Brunt Ev, et al. (2019) Gate Oxide Reliability of SiC MOSFETs and Capacitors Fabricated on 150mm Wafers Materials Science Forum. 963: 745-748 |
| Ryu SH, Lichtenwalner DJ, O’Loughlin M, et al. (2019) 15 kV n-GTOs in 4H-SiC Materials Science Forum. 963: 651-654 |
| Akturk A, McGarrity JM, Goldsman N, et al. (2019) Predicting Cosmic Ray-Induced Failures in Silicon Carbide Power Devices Ieee Transactions On Nuclear Science. 66: 1828-1832 |
| Zhang JQ, McCain M, Hull B, et al. (2018) 650 V, 7 mΩ 4H-SiC DMOSFETs for Dual-Side Sintered Power Modules Materials Science Forum. 924: 822-826 |
| Anurag A, Gohil G, Acharya S, et al. (2018) Static and Dynamic Characterization of a 3.3 Kv, 45 A 4H-Sic MOSFET Materials Science Forum. 924: 739-742 |
| Ryu SH, Lichtenwalner DJ, O'Loughlin M, et al. (2018) Blocking Performance Improvements for 4H-SiC P-GTO Thyristors with Carrier Lifetime Enhancement Processes Materials Science Forum. 924: 633-636 |
| Lichtenwalner DJ, Akturk A, McGarrity J, et al. (2018) Reliability of SiC Power Devices against Cosmic Ray Neutron Single-Event Burnout Materials Science Forum. 924: 559-562 |
| Brunt EV, Burk A, Lichtenwalner DJ, et al. (2018) Performance and Reliability Impacts of Extended Epitaxial Defects on 4H-SiC Power Devices Materials Science Forum. 924: 137-142 |