Erich Gornik, Ph.D.
Affiliations: | Institute for Solid State Electronics | TU Wien / Technical University of Vienna |
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"Erich Gornik"Children
Sign in to add trainee| Claire Gmachl | grad student | 1995 | TU Wien / Technical University of Vienna |
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Publications
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| Hillbrand J, Auth D, Piccardo M, et al. (2020) In-Phase and Anti-Phase Synchronization in a Laser Frequency Comb. Physical Review Letters. 124: 023901 |
| Berthold G, Smoliner J, Rosskopf V, et al. (2019) Magnetoresistance and temperature effects in dotlike lateral surface superlattices. Physical Review. B, Condensed Matter. 47: 10383-10388 |
| Smoliner J, Rosskopf V, Berthold G, et al. (2019) Density-of-states effects in lateral-surface superlattices. Physical Review. B, Condensed Matter. 45: 1915-1918 |
| Berthold G, Smoliner J, Rosskopf V, et al. (2019) Magnetoresistance in dotlike and antidotlike structures. Physical Review. B, Condensed Matter. 45: 11350-11353 |
| Holzbauer M, Klang P, Detz H, et al. (2014) Resonant intersubband plasmon induced current in InGaAs quantum wells on GaAs Applied Physics Letters. 104: 122101 |
| Sousa JSd, Detz H, Klang P, et al. (2012) Large Rashba effect in GaAsSb/InGaAs RTDs at high temperatures Journal of the Korean Physical Society. 60: 1762-1766 |
| Kuzmik J, Vitanov S, Dua C, et al. (2012) Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors Japanese Journal of Applied Physics. 51: 54102 |
| Mamanee W, Bychikhin S, Johnsson D, et al. (2012) Effect of Elevated Ambient Temperature on Thermal Breakdown Behavior in BCD ESD Protection Devices Subjected to Long Electrical Overstress Pulses Ieee Transactions On Device and Materials Reliability. 12: 562-569 |
| Pogany D, Johnsson D, Bychikhin S, et al. (2011) Measuring Holding Voltage Related to Homogeneous Current Flow in Wide ESD Protection Structures Using Multilevel TLP Ieee Transactions On Electron Devices. 58: 411-418 |
| Sousa JSd, Detz H, Klang P, et al. (2011) Enhanced Rashba effect in transverse magnetic fields observed on InGaAs/GaAsSb resonant tunneling diodes at temperatures up to T = 180 K Applied Physics Letters. 99: 152107 |