Steven Wienecke
Affiliations: | 2010- | Electrical & Computer Engineering | University of California, Santa Barbara, Santa Barbara, CA, United States |
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"Steven Wienecke"
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| Romanczyk B, Wienecke S, Guidry M, et al. (2018) Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs Ieee Transactions On Electron Devices. 65: 45-50 |
| Bisi D, Santi CD, Meneghini M, et al. (2018) Observation of Hot Electron and Impact Ionization in N-Polar GaN MIS-HEMTs Ieee Electron Device Letters. 39: 1007-1010 |
| Koksaldi OS, Haller J, Li H, et al. (2018) N-Polar GaN HEMTs Exhibiting Record Breakdown Voltage Over 2000 V and Low Dynamic On-Resistance Ieee Electron Device Letters. 39: 1014-1017 |
| Zheng X, Li H, Guidry M, et al. (2018) Analysis of MOCVD SiNx Passivated N-Polar GaN MIS-HEMTs on Sapphire With High $f_{max}\cdot V_{DS,Q}$ Ieee Electron Device Letters. 39: 409-412 |
| Li H, Wienecke S, Romanczyk B, et al. (2018) Enhanced mobility in vertically scaled N-polar high-electron-mobility transistors using GaN/InGaN composite channels Applied Physics Letters. 112: 73501 |
| Wienecke S, Romanczyk B, Guidry M, et al. (2017) N-Polar GaN Cap MISHEMT With Record Power Density Exceeding 6.5 W/mm at 94 GHz Ieee Electron Device Letters. 38: 359-362 |
| Li H, Mazumder B, Bonef B, et al. (2017) Characterization of N-polar AlN in GaN/AlN/(Al,Ga)N heterostructures grown by metal-organic chemical vapor deposition Semiconductor Science and Technology. 32: 115004 |
| Wienecke S, Romanczyk B, Guidry M, et al. (2016) N-Polar Deep Recess MISHEMTs with Record 2.9 W/mm at 94 GHz Ieee Electron Device Letters. 37: 713-716 |
| Zheng X, Guidry M, Li H, et al. (2016) N-Polar GaN MIS-HEMTs on Sapphire with High Combination of Power Gain Cutoff Frequency and Three-Terminal Breakdown Voltage Ieee Electron Device Letters. 37: 77-80 |
| Romanczyk B, Guidry M, Wienecke S, et al. (2016) Record 34.2% efficient mm-wave N-polar AlGaN/GaN MISHEMT at 87 GHz Electronics Letters. 52: 1813-1814 |