Wei Sun, Ph.D.
Affiliations: | 2014-2019 | Electrical and Computer Engineering | Lehigh University, Bethlehem, PA, United States |
Google:
"Wei Sun"
BETA: Related publications
See more...
Publications
You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect. |
Peart MR, Borovac D, Sun W, et al. (2020) AlInN/GaN diodes for power electronic devices Applied Physics Express. 13: 91006 |
Borovac D, Sun W, Tan C, et al. (2020) Electronic properties of dilute-As InGaNAs alloys: A first-principles study Journal of Applied Physics. 127: 015103 |
Borovac D, Sun W, Peart MR, et al. (2020) Low background doping in AlInN grown on GaN via metalorganic vapor phase epitaxy Journal of Crystal Growth. 548: 125847 |
Borovac D, Sun W, Song R, et al. (2020) On the thermal stability of nearly lattice-matched AlInN films grown on GaN via MOVPE Journal of Crystal Growth. 533: 125469 |
Sun W, Kim H, Mawst LJ, et al. (2020) Interplay of GaAsP barrier and strain compensation in InGaAs quantum well at near-critical thickness Journal of Crystal Growth. 531: 125381 |
Al Muyeed SA, Sun W, Peart MR, et al. (2019) Recombination rates in green-yellow InGaN-based multiple quantum wells with AlGaN interlayers Journal of Applied Physics. 126: 213106 |
Fu H, Sun W, Ogidi-Ekoko O, et al. (2019) Gain characteristics of InGaN quantum wells with AlGaInN barriers Aip Advances. 9: 045013 |
Sun W, Tan CK, Wierer JJ, et al. (2018) Ultra-Broadband Optical Gain in III-Nitride Digital Alloys. Scientific Reports. 8: 3109 |
Zeng G, Sun W, Song R, et al. (2018) Publisher Correction: Crystal Orientation Dependence of Gallium Nitride Wear. Scientific Reports. 8: 2580 |
Wei X, Al Muyeed SA, Peart MR, et al. (2018) Room temperature luminescence of passivated InGaN quantum dots formed by quantum-sized-controlled photoelectrochemical etching Applied Physics Letters. 113: 121106 |