Tian-Li Wu
Affiliations: | National Chiao Tung University, Taiwan |
Area:
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"Tian-Li Wu"
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Publications
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| Chang TY, Wang KC, Liu HY, et al. (2023) Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO Metal-Ferroelectric-Metal Memory. Nanomaterials (Basel, Switzerland). 13 |
| Ngo ST, Lu CH, Tarntair FG, et al. (2023) Demonstration of MOCVD-grown GaO power MOSFETs on sapphire with in-situ Si-doped by tetraethyl orthosilicate (TEOS). Discover Nano. 18: 79 |
| Wu TL, Tang SW, Jiang HJ. (2020) Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic. Micromachines. 11 |
| Jiang J, Hung J, Huang P, et al. (2020) Study on the effects of Si implantation on the interface of 4H-SiC lateral MOSFETs Japanese Journal of Applied Physics. 59: 0-0 |
| Chen Y, Su C, Yang T, et al. (2020) Improved TDDB Reliability and Interface States in 5-nm Hf 0.5 Zr 0.5 O 2 Ferroelectric Technologies Using NH 3 Plasma and Microwave Annealing Ieee Transactions On Electron Devices. 67: 1581-1585 |
| Sharma C, Modolo N, Wu T, et al. (2020) Understanding $\gamma$ -Ray Induced Instability in AlGaN/GaN HEMTs Using a Physics-Based Compact Model Ieee Transactions On Electron Devices. 67: 1126-1131 |
| Sharma C, Singh R, Chao D, et al. (2020) Effects of γ-Ray Irradiation on AlGaN/GaN Heterostructures and High Electron Mobility Transistor Devices Journal of Electronic Materials. 1-9 |
| Chen Y, Su C, Hu C, et al. (2019) Effects of Annealing on Ferroelectric Hafnium–Zirconium–Oxide-Based Transistor Technology Ieee Electron Device Letters. 40: 467-470 |
| Sharma C, Modolo N, Chen H, et al. (2019) Investigation of the degradations in power GaN-on-Si MIS-HEMTs subjected to cumulative γ-ray irradiation Microelectronics Reliability. 100: 113349 |
| Wu T, Bakeroot B, Liang H, et al. (2017) Analysis of the Gate Capacitance–Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures Ieee Electron Device Letters. 38: 1696-1699 |