Michael Shur
Affiliations: | 1967 | Physics | A. F. Ioffe Institute of Physics and Technology |
| 1977-1978 | Wayne State University, Detroit, MI, United States | ||
| 1978-1979 | Oakland University, Rochester Hills, MI, United States | ||
| 1979-1989 | Electrical Engineering | University of Minnesota, Twin Cities, Minneapolis, MN | |
| 1989-1996 | University of Virginia, Charlottesville, VA | ||
| 1996- | Solid State Electronics | Rensselaer Polytechnic Institute, Troy, NY, United States |
Website:
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"Michael Shur"
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Publications
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| Nikoobakht B, Hansen RP, Zong Y, et al. (2020) High-brightness lasing at submicrometer enabled by droop-free fin light-emitting diodes (LEDs). Science Advances. 6: eaba4346 |
| Liu X, Ytterdal T, Shur M. (2020) Plasmonic FET Terahertz Spectrometer Ieee Access. 8: 56039-56044 |
| Aizin GR, Mikalopas J, Shur M. (2020) Plasmonic instabilities in two-dimensional electron channels of variable width Physical Review B. 101 |
| Ryzhii V, Ryzhii M, Otsuji T, et al. (2020) Multiple graphene-layer-based heterostructures with van der Waals barrier layers for terahertz superluminescent and laser diodes with lateral/vertical current injection Semiconductor Science and Technology. 35: 085023 |
| Ryzhii V, Otsuji T, Shur M. (2020) Graphene based plasma-wave devices for terahertz applications Applied Physics Letters. 116: 140501 |
| Ponomarev DS, Lavrukhin DV, Yachmenev AE, et al. (2019) Sub-terahertz FET detector with self-assembled Sn-nanothreads Journal of Physics D: Applied Physics. 53: 075102 |
| Shur M. (2019) Wide band gap semiconductor technology: State-of-the-art Solid-State Electronics. 155: 65-75 |
| Ryzhii V, Otsuji T, Ryzhii M, et al. (2018) Electrical modulation of terahertz radiation using graphene-phosphorene heterostructures Semiconductor Science and Technology. 33: 124010 |
| Shur M, Rudin S, Rupper G, et al. (2018) p-Diamond as candidate for plasmonic terahertz and far infrared applications Applied Physics Letters. 113: 253502 |
| Liu G, Rumyantsev S, Bloodgood MA, et al. (2017) Low-Frequency Electronic Noise in Quasi-1D TaSe3 van der Waals Nanowires. Nano Letters. 17: 377-383 |