Zhanbo Xia
Affiliations: | Ohio State University, Columbus, Columbus, OH |
Area:
Solid StatesGoogle:
"Zhanbo Xia"
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Publications
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| Cheng J, Wang C, Freeze C, et al. (2020) High-Current Perovskite Oxide BaTiO 3 /BaSnO 3 Heterostructure Field Effect Transistors Ieee Electron Device Letters. 41: 621-624 |
| Kumar N, Vaca D, Joishi C, et al. (2020) Ultrafast Thermoreflectance Imaging and Electrothermal Modeling of β-Ga2O3 MESFETs Ieee Electron Device Letters. 41: 641-644 |
| Kalarickal NK, Xia Z, McGlone JF, et al. (2020) High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer Journal of Applied Physics. 127: 215706 |
| Razzak T, Chandrasekar H, Hussain K, et al. (2020) BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm Applied Physics Letters. 116: 23507 |
| Xue H, Hwang S, Razzak T, et al. (2020) All MOCVD grown Al0.7Ga0.3N/Al0.5Ga0.5N HFET: An approach to make ohmic contacts to Al-rich AlGaN channel transistors Solid-State Electronics. 164: 107696 |
| Lee H, Kalarickal NK, Rahman MW, et al. (2020) High-permittivity dielectric edge termination for vertical high voltage devices Journal of Computational Electronics. 1-8 |
| Feng Z, Bhuiyan AFMAU, Xia Z, et al. (2020) Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga 2 O 3 Physica Status Solidi-Rapid Research Letters. 14: 2000145 |
| Xue H, Lee CH, Hussian K, et al. (2019) Al0.75Ga0.25N/Al0.6Ga0.4N heterojunction field effect transistor with fT of 40 GHz Applied Physics Express. 12: 66502 |
| Kumar N, Joishi C, Xia Z, et al. (2019) Electrothermal Characteristics of Delta-Doped $\beta$ -Ga2O3 Metal–Semiconductor Field-Effect Transistors Ieee Transactions On Electron Devices. 66: 5360-5366 |
| Zhang Y, Xia Z, Mcglone J, et al. (2019) Evaluation of Low-Temperature Saturation Velocity in |