Year |
Citation |
Score |
2017 |
Sardashti K, Chagarov E, Antunez PD, Gershon TS, Ueda ST, Gokmen T, Bishop D, Haight R, Kummel AC. Nanoscale Characterization of Back Surfaces and Interfaces in Thin-Film Kesterite Solar Cells. Acs Applied Materials & Interfaces. PMID 28452464 DOI: 10.1021/Acsami.7B01838 |
0.302 |
|
2017 |
Haight R, Gershon T, Gunawan O, Antunez P, Bishop D, Lee YS, Gokmen T, Sardashti K, Chagarov E, Kummel A. Industrial perspectives on earth abundant, multinary thin film photovoltaics Semiconductor Science and Technology. 32: 033004. DOI: 10.1088/1361-6641/Aa5C18 |
0.556 |
|
2017 |
Gershon T, Gunawan O, Gokmen T, Brew KW, Singh S, Hopstaken M, Poindexter JR, Barnard ES, Buonassisi T, Haight R. Analysis of loss mechanisms in Ag2ZnSnSe4 Schottky barrier photovoltaics Journal of Applied Physics. 121: 174501. DOI: 10.1063/1.4982906 |
0.604 |
|
2017 |
Gershon T, Bishop D, Antunez P, Singh S, Brew KW, Lee YS, Gunawan O, Gokmen T, Todorov T, Haight R. Unconventional kesterites: The quest to reduce band tailing in CZTSSe Current Opinion in Green and Sustainable Chemistry. 4: 29-36. DOI: 10.1016/J.Cogsc.2017.01.003 |
0.598 |
|
2017 |
Antunez PD, Bishop DM, Lee YS, Gokmen T, Gunawan O, Gershon TS, Todorov TK, Singh S, Haight R. Back Contact Engineering for Increased Performance in Kesterite Solar Cells Advanced Energy Materials. 7: 1602585. DOI: 10.1002/Aenm.201602585 |
0.645 |
|
2015 |
Gunawan O, Gokmen T, Mitzi DB. High intensity and integrated Suns-Voc characterization of high performance kesterite solar cells 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7355690 |
0.675 |
|
2015 |
Gershon BT, Lee YS, Mankad R, Gunawan O, Gokmen T, Bishop D, McCandless B, Guha S. The impact of sodium on the sub-bandgap states in CZTSe and CZTS Applied Physics Letters. 106. DOI: 10.1063/1.4916635 |
0.618 |
|
2015 |
Sardashti K, Haight R, Gokmen T, Wang W, Chang LY, Mitzi DB, Kummel AC. Impact of nanoscale elemental distribution in high-performance kesterite solar cells Advanced Energy Materials. 5. DOI: 10.1002/Aenm.201402180 |
0.583 |
|
2015 |
Gunawan O, Gokmen T, Mitzi DB. Device Characteristics of Hydrazine-Processed CZTSSe Copper Zinc Tin Sulfide-Based Thin-Film Solar Cells. 387-411. DOI: 10.1002/9781118437865.ch17 |
0.704 |
|
2014 |
Kim J, Hiroi H, Todorov TK, Gunawan O, Kuwahara M, Gokmen T, Nair D, Hopstaken M, Shin B, Lee YS, Wang W, Sugimoto H, Mitzi DB. High efficiency Cu2ZnSn(S,Se)4 solar cells by applying a double In2S3/CdS emitter. Advanced Materials (Deerfield Beach, Fla.). 26: 7427-31. PMID 25155874 DOI: 10.1002/Adma.201402373 |
0.688 |
|
2014 |
Gershon T, Gokmen T, Gunawan O, Haight R, Guha S, Shin B. Understanding the relationship between Cu2ZnSn(S,Se)4 material properties and device performance Mrs Communications. 4: 159-170. DOI: 10.1557/Mrc.2014.34 |
0.605 |
|
2014 |
Todorov T, Sugimoto H, Gunawan O, Gokmen T, Mitzi DB. High-efficiency devices with pure solution-processed Cu2 ZnSn(S,Se)4 Absorbers Ieee Journal of Photovoltaics. 4: 483-485. DOI: 10.1109/Jphotov.2013.2287754 |
0.699 |
|
2014 |
Gunawan O, Gokmen T, Mitzi DB. Suns- VOC characteristics of high performance kesterite solar cells Journal of Applied Physics. 116. DOI: 10.1063/1.4893315 |
0.708 |
|
2014 |
Gokmen T, Gunawan O, Mitzi DB. Semi-empirical device model for Cu2ZnSn(S,Se)4 solar cells Applied Physics Letters. 105. DOI: 10.1063/1.4890844 |
0.718 |
|
2014 |
Guo L, Zhu Y, Gunawan O, Gokmen T, Deline VR, Ahmed S, Romankiw LT, Deligianni H. Electrodeposited Cu2ZnSnSe4 thin film solar cell with 7% power conversion efficiency Progress in Photovoltaics: Research and Applications. 22: 58-68. DOI: 10.1002/Pip.2332 |
0.626 |
|
2014 |
Lee YS, Gershon T, Gunawan O, Todorov TK, Gokmen T, Virgus Y, Guha S. Cu2ZnSnSe4 thin-film solar cells by thermal co-evaporation with 11.6% efficiency and improved minority carrier diffusion length Advanced Energy Materials. 5. DOI: 10.1002/Aenm.201401372 |
0.583 |
|
2014 |
Wang W, Winkler MT, Gunawan O, Gokmen T, Todorov TK, Zhu Y, Mitzi DB. Device characteristics of CZTSSe thin-film solar cells with 12.6% efficiency Advanced Energy Materials. 4. DOI: 10.1002/Aenm.201301465 |
0.686 |
|
2014 |
Kim J, Hiroi H, Todorov TK, Gunawan O, Kuwahara M, Gokmen T, Nair D, Hopstaken M, Shin B, Lee YS, Wang W, Sugimoto H, Mitzi DB. Solar Cells: High Efficiency Cu2ZnSn(S,Se)4Solar Cells by Applying a Double In2S3/CdS Emitter (Adv. Mater. 44/2014) Advanced Materials. 26: 7426-7426. DOI: 10.1002/Adma.201470303 |
0.589 |
|
2013 |
Gershon T, Shin B, Gokmen T, Lu S, Bojarczuk N, Guha S. Relationship between Cu2ZnSnS4 quasi donor-acceptor pair density and solar cell efficiency Applied Physics Letters. 103. DOI: 10.1063/1.4829920 |
0.362 |
|
2013 |
Gershon T, Shin B, Bojarczuk N, Gokmen T, Lu S, Guha S. Photoluminescence characterization of a high-efficiency Cu 2ZnSnS4 device Journal of Applied Physics. 114. DOI: 10.1063/1.4825317 |
0.35 |
|
2013 |
Gokmen T, Gunawan O, Mitzi DB. Minority carrier diffusion length extraction in Cu2ZnSn(Se,S) 4 solar cells Journal of Applied Physics. 114. DOI: 10.1063/1.4821841 |
0.71 |
|
2013 |
Gokmen T, Gunawan O, Todorov TK, Mitzi DB. Band tailing and efficiency limitation in kesterite solar cells Applied Physics Letters. 103. DOI: 10.1063/1.4820250 |
0.738 |
|
2013 |
Todorov TK, Gunawan O, Gokmen T, Mitzi DB. Solution-processed Cu(In,Ga)(S,Se)2 absorber yielding a 15.2% efficient solar cell Progress in Photovoltaics: Research and Applications. 21: 82-87. DOI: 10.1002/Pip.1253 |
0.707 |
|
2013 |
Todorov TK, Tang J, Bag S, Gunawan O, Gokmen T, Zhu Y, Mitzi DB. Beyond 11% effi ciency: Characteristics of state-of-the-art Cu 2ZnSn(S,Se)4Solar Cells Advanced Energy Materials. 3: 34-38. DOI: 10.1002/Aenm.201200348 |
0.731 |
|
2012 |
Gunawan O, Gokmen T, Shin BS, Guha S. Device characteristics of high performance Cu2ZnSnS4 solar cell Conference Record of the Ieee Photovoltaic Specialists Conference. 3001-3003. DOI: 10.1109/PVSC.2012.6318215 |
0.583 |
|
2012 |
Miller DW, Warren CW, Gunawan O, Gokmen T, Mitzi DB, Cohen JD. Electronically active defects in the Cu 2ZnSn(Se,S) 4 alloys as revealed by transient photocapacitance spectroscopy Applied Physics Letters. 101. DOI: 10.1063/1.4754834 |
0.711 |
|
2012 |
Gunawan O, Gokmen T, Warren CW, Cohen JD, Todorov TK, Barkhouse DAR, Bag S, Tang J, Shin B, Mitzi DB. Electronic properties of the Cu 2ZnSn(Se,S) 4 absorber layer in solar cells as revealed by admittance spectroscopy and related methods Applied Physics Letters. 100. DOI: 10.1063/1.4729751 |
0.764 |
|
2012 |
Shahrjerdi D, Bedell SW, Ebert C, Bayram C, Hekmatshoar B, Fogel K, Lauro P, Gaynes M, Gokmen T, Ott JA, Sadana DK. High-efficiency thin-film InGaP/InGaAs/Ge tandem solar cells enabled by controlled spalling technology Applied Physics Letters. 100. DOI: 10.1063/1.3681397 |
0.321 |
|
2012 |
Bag S, Gunawan O, Gokmen T, Zhu Y, Todorov TK, Mitzi DB. Low band gap liquid-processed CZTSe solar cell with 10.1% efficiency Energy and Environmental Science. 5: 7060-7065. DOI: 10.1039/C2Ee00056C |
0.765 |
|
2012 |
Bag S, Gunawan O, Gokmen T, Zhu Y, Mitzi DB. Hydrazine-processed Ge-substituted CZTSe solar cells Chemistry of Materials. 24: 4588-4593. DOI: 10.1021/Cm302881G |
0.751 |
|
2012 |
Barkhouse DAR, Gunawan O, Gokmen T, Todorov TK, Mitzi DB. Device characteristics of a 10.1% hydrazine-processed Cu 2ZnSn(Se,S) 4 solar cell Progress in Photovoltaics: Research and Applications. 20: 6-11. DOI: 10.1002/Pip.1160 |
0.717 |
|
2011 |
Chiu Y, Padmanabhan M, Gokmen T, Shabani J, Tutuc E, Shayegan M, Winkler R. Effective mass and spin susceptibility of dilute two-dimensional holes in GaAs Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.155459 |
0.813 |
|
2010 |
Padmanabhan M, Gokmen T, Shayegan M. Ferromagnetic fractional quantum Hall states in a valley-degenerate two-dimensional electron system. Physical Review Letters. 104: 016805. PMID 20366382 DOI: 10.1103/Physrevlett.104.016805 |
0.726 |
|
2010 |
Gokmen T, Padmanabhan M, Shayegan M. Contrast between spin and valley degrees of freedom Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.235305 |
0.721 |
|
2010 |
Gokmen T, Shayegan M. Density and strain dependence of ν=1 energy gap in a valley-degenerate AlAs quantum well Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.115336 |
0.589 |
|
2010 |
Padmanabhan M, Gokmen T, Shayegan M. Composite fermion valley polarization energies: Evidence for particle-hole asymmetry Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.113301 |
0.677 |
|
2010 |
Gokmen T, Padmanabhan M, Shayegan M. Transference of transport anisotropy to composite fermions Nature Physics. 6: 621-624. DOI: 10.1038/Nphys1684 |
0.703 |
|
2010 |
Gokmen T, Padmanabhan M, Shayegan M. Temperature dependence of piezoresistance of composite Fermions with a valley degree of freedom Solid State Communications. 150: 1165-1168. DOI: 10.1016/J.Ssc.2010.04.024 |
0.682 |
|
2009 |
Shabani J, Gokmen T, Chiu YT, Shayegan M. Evidence for developing fractional quantum Hall states at even denominator 1/2 and 1/4 fillings in asymmetric wide quantum wells. Physical Review Letters. 103: 256802. PMID 20366273 DOI: 10.1103/Physrevlett.103.256802 |
0.716 |
|
2009 |
Shabani J, Gokmen T, Shayegan M. Correlated states of electrons in wide quantum wells at low fillings: the role of charge distribution symmetry. Physical Review Letters. 103: 046805. PMID 19659383 DOI: 10.1103/Physrevlett.103.046805 |
0.735 |
|
2009 |
Padmanabhan M, Gokmen T, Shayegan M. Density dependence of valley polarization energy for composite fermions Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.035423 |
0.702 |
|
2009 |
Asgari R, Gokmen T, Tanatar B, Padmanabhan M, Shayegan M. Effective mass suppression in a ferromagnetic two-dimensional electron liquid Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.235324 |
0.704 |
|
2009 |
Gokmen T, Padmanabhan M, Vakili K, Tutuc E, Shayegan M. Effective mass suppression upon complete spin-polarization in an isotropic two-dimensional electron system Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.195311 |
0.83 |
|
2008 |
Gokmen T, Padmanabhan M, Shayegan M. Dependence of effective mass on spin and valley degrees of freedom. Physical Review Letters. 101: 146405. PMID 18851552 DOI: 10.1103/Physrevlett.101.146405 |
0.744 |
|
2008 |
Padmanabhan M, Gokmen T, Bishop NC, Shayegan M. Effective mass suppression in dilute, spin-polarized two-dimensional electron systems. Physical Review Letters. 101: 026402. PMID 18764203 DOI: 10.1103/Physrevlett.101.026402 |
0.789 |
|
2008 |
Gunawan O, Gokmen T, Shkolnikov YP, De Poortere EP, Shayegan M. Anomalous giant piezoresistance in AlAs 2D electron systems with antidot lattices. Physical Review Letters. 100: 036602. PMID 18233015 DOI: 10.1103/Physrevlett.100.036602 |
0.802 |
|
2008 |
Tsukazaki A, Ohtomo A, Kawasaki M, Akasaka S, Yuji H, Tamura K, Nakahara K, Tanabe T, Kamisawa A, Gokmen T, Shabani J, Shayegan M. Spin susceptibility and effective mass of two-dimensional electrons in Mgx Zn1-x O/ZnO heterostructures Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.233308 |
0.766 |
|
2008 |
Gokmen T, Padmanabhan M, Gunawan O, Shkolnikov YP, Vakili K, De Poortere EP, Shayegan M. Parallel magnetic-field tuning of valley splitting in AlAs two-dimensional electrons Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.233306 |
0.781 |
|
2008 |
Padmanabhan M, Gokmen T, Shayegan M. Enhancement of valley susceptibility upon complete spin polarization Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.161301 |
0.739 |
|
2008 |
Gunawan O, Gokmen T, De Poortere EP, Shayegan M. Characterization of the anomalous giant piezoresistance in AlAs two-dimensional electrons with anti-dot lattices Semiconductor Science and Technology. 23: 085005. DOI: 10.1088/0268-1242/23/8/085005 |
0.796 |
|
2008 |
Bishop NC, Padmanabhan M, Gunawan O, Gokmen T, De Poortere EP, Shkolnikov YP, Tutuc E, Vakili K, Shayegan M. Valley susceptibility of interacting electrons and composite fermions Physica E: Low-Dimensional Systems and Nanostructures. 40: 986-989. DOI: 10.1016/J.Physe.2007.08.067 |
0.785 |
|
2007 |
Gokmen T, Padmanabhan M, Tutuc E, Shayegan M, De Palo S, Moroni S, Senatore G. Spin susceptibility of interacting two-dimensional electrons with anisotropic effective mass Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.233301 |
0.794 |
|
2007 |
Gunawan O, Gokmen T, Vakili K, Padmanabhan M, De Poortere EP, Shayegan M. Spin-valley phase diagram of the two-dimensional metal-insulator transition Nature Physics. 3: 388-391. DOI: 10.1038/Nphys596 |
0.786 |
|
2006 |
Gunawan O, Shkolnikov YP, Vakili K, Gokmen T, De Poortere EP, Shayegan M. Valley susceptibility of an interacting two-dimensional electron system. Physical Review Letters. 97: 186404. PMID 17155564 DOI: 10.1103/Physrevlett.97.186404 |
0.8 |
|
2006 |
Vakili K, Gokmen T, Gunawan O, Shkolnikov YP, De Poortere EP, Shayegan M. Dependence of persistent gaps at landau level crossings on relative spin. Physical Review Letters. 97: 116803. PMID 17025916 DOI: 10.1103/Physrevlett.97.116803 |
0.787 |
|
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