Chad Eichfeld, Ph.D. - Publications

Affiliations: 
2009 Pennsylvania State University, State College, PA, United States 
Area:
Materials Science Engineering

7 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2012 Eichfeld CM, Gerstl SS, Prosa T, Ke Y, Redwing JM, Mohney SE. Local electrode atom probe analysis of silicon nanowires grown with an aluminum catalyst. Nanotechnology. 23: 215205. PMID 22552162 DOI: 10.1088/0957-4484/23/21/215205  0.561
2011 Eichfeld SM, Shen H, Eichfeld CM, Mohney SE, Dickey EC, Redwing JM. Gas phase equilibrium limitations on the vapor-liquid-solid growth of epitaxial silicon nanowires using SiCl4 Journal of Materials Research. 26: 2207-2214. DOI: 10.1557/Jmr.2011.144  0.556
2011 Redwing JM, Ke Y, Wang X, Eichfeld C, Weng X, Kendrick CE, Mohney SE, Mayer TS. Vapor-liquid-solid growth and characterization of al-catalyzed Si nanowires 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135144  0.607
2009 Ke Y, Weng X, Redwing JM, Eichfeld CM, Swisher TR, Mohney SE, Habib YM. Fabrication and electrical properties of si nanowires synthesized by Al catalyzed vapor-liquid-solid growth. Nano Letters. 9: 4494-9. PMID 19904918 DOI: 10.1021/Nl902808R  0.613
2009 Cooley BJ, Clark TE, Liu BZ, Eichfeld CM, Dickey EC, Mohney SE, Crooker SA, Samarth N. Growth of magneto-optically active (Zn,Mn)Se nanowires. Nano Letters. 9: 3142-6. PMID 19736970 DOI: 10.1021/Nl901272Q  0.53
2007 Eichfeld CM, Wood C, Liu B, Eichfeld SM, Redwing JM, Mohney SE. Selective plating for junction delineation in silicon nanowires. Nano Letters. 7: 2642-4. PMID 17696558 DOI: 10.1021/Nl0710248  0.523
2005 Eichfeld CM, Horsey MA, Mohney SE, Adedeji AV, Williams JR. Ta-Ru-N diffusion barriers for high-temperature contacts to p-type SiC Thin Solid Films. 485: 207-211. DOI: 10.1016/j.tsf.2005.04.005  0.495
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