Bharat Jalan, Ph.D.
Affiliations: | 2011 | Materials | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Materials Science Engineering, Condensed Matter Physics, Electronics and Electrical EngineeringGoogle:
"Bharat Jalan"Parents
Sign in to add mentorSusanne Stemmer | grad student | 2011 | UC Santa Barbara | |
(Hybrid Molecular Beam Epitaxy for High Quality Strontium Titanate.) |
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Publications
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Nair S, Yang Z, Storr K, et al. (2024) High-Mobility Carriers in Epitaxial IrO Films Grown using Hybrid Molecular Beam Epitaxy. Nano Letters |
Varshney S, Choo S, Thompson L, et al. (2024) Hybrid Molecular Beam Epitaxy for Single-Crystalline Oxide Membranes with Binary Oxide Sacrificial Layers. Acs Nano |
Manjeshwar AK, Nair S, Rajapitamahuni AK, et al. (2023) Adsorption-Controlled Growth and Magnetism in Epitaxial SrRuO Films. Acs Nano |
Liu F, Golani P, Truttmann TK, et al. (2023) Doping the Undopable: Hybrid Molecular Beam Epitaxy Growth, n-Type Doping, and Field-Effect Transistor Using CaSnO. Acs Nano |
Ghosh S, Liu F, Jalan B, et al. (2023) Control of Extended Defect Growth in Perovskite Oxide Thin Films using Nanoscale Patterning. Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 29: 541-542 |
Nair S, Yang Z, Lee D, et al. (2023) Engineering metal oxidation using epitaxial strain. Nature Nanotechnology |
Yoon H, Truttmann TK, Liu F, et al. (2022) Freestanding epitaxial SrTiO nanomembranes via remote epitaxy using hybrid molecular beam epitaxy. Science Advances. 8: eadd5328 |
Yang Z, Lee D, Yue J, et al. (2022) Epitaxial SrTiO films with dielectric constants exceeding 25,000. Proceedings of the National Academy of Sciences of the United States of America. 119: e2202189119 |
Yue J, Ayino Y, Truttmann TK, et al. (2022) Anomalous transport in high-mobility superconducting SrTiO thin films. Science Advances. 8: eabl5668 |
Rajapitamahuni AK, Manjeshwar AK, Kumar A, et al. (2022) Plasmon-Phonon Coupling in Electrostatically Gated β-GaO Films with Mobility Exceeding 200 cm V s. Acs Nano |