Stephan Grunow, Ph.D.

Affiliations: 
2002 State University of New York, Albany, Albany, NY, United States 
Area:
Condensed Matter Physics, Materials Science Engineering
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"Stephan Grunow"

Parents

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Alain E. Kaloyeros grad student 2002 SUNY Albany
 (Electrochemical deposition of copper for gigascale interconnect technologies.)
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Publications

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Zhang JH, Tseng WT, Chen T, et al. (2013) Reducing density-induced CMP non-uniformity for advanced semiconductor technology nodes Materials Research Society Symposium Proceedings. 1560: 79-84
Shao I, Cheng T, Findeis P, et al. (2013) Optimization of Cu damascene electrodeposition process in ULSI for yield and reliability improvement Ecs Transactions. 58: 43-48
Tseng WT, Devarapalli V, Steffes J, et al. (2013) Hybrid clean approach for post-copper CMP defect reduction Asmc (Advanced Semiconductor Manufacturing Conference) Proceedings. 346-351
Yao S, McGahay V, Angyal MS, et al. (2012) 32nm node highly reliable Cu/low-k integration technology with CuMn alloy seed Materials Research Society Symposium Proceedings. 1335: 81-86
Yao S, Tseng WT, Kapur A, et al. (2011) Formation mechanism and suppression methods of copper dendrites in BEOL integration Advanced Metallization Conference (Amc). 40-41
Huang E, Oh M, Law SB, et al. (2010) CoWP metal caps for reliable 32 nm 1X Cu interconnects in porous ULK (k=2.4) Advanced Metallization Conference (Amc). 179-184
Ee YC, Kioussis D, Angyal MS, et al. (2010) UV curing-induced photoresist poisoning in advanced ULK BEOL integration schemes Advanced Metallization Conference (Amc). 185-192
Simon AH, Bolom T, Tang TJ, et al. (2008) Extendibility study of a PVD Cu seed process with Ar+ Rf-Plasma enhanced coverage for 45nm interconnects Materials Research Society Symposium Proceedings. 1079: 35-40
Hu CK, Gignac L, Liniger E, et al. (2007) Comparison of electromigration in Cu interconnects with atomic-layer- or physical-vapor-deposited TaN liners Journal of the Electrochemical Society. 154
Hu CK, Gignac L, Liniger E, et al. (2007) Comparison of electromigration in Cu interconnects with ALD or PVD TaN liners Ecs Transactions. 3: 139-146
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