Peiqi Xuan, Ph.D.
Affiliations: | University of California, Berkeley, Berkeley, CA, United States |
Area:
nanoscale scienceGoogle:
"Peiqi Xuan"Mean distance: 13.92
Parents
Sign in to add mentor| Jeffrey Bokor | grad student | 2003 | UC Berkeley | |
| (Nano-scaled logic and memory devices: Modeling and fabrication.) | ||||
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Publications
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| Lin J, Xuan P, Bokor J. (2005) Characterization of chemical vapor deposition growth yields of carbon nanotube transistors Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44: 6859-6861 |
| Liu H, Sin JKO, Xuan P, et al. (2004) Characterization of the ultrathin vertical channel CMOS technology Ieee Transactions On Electron Devices. 51: 106-112 |
| Tseng YC, Xuan P, Javey A, et al. (2004) Monolithic Integration of Carbon Nanotube Devices with Silicon MOS Technology Nano Letters. 4: 123-127 |
| Chang L, Choi YK, Kedzierski J, et al. (2003) Moore's law lives on Ieee Circuits and Devices Magazine. 19: 35-42 |
| Xuan P, Bokor J. (2003) Investigation of NiSi and TiSi as CMOS Gate Materials Ieee Electron Device Letters. 24: 634-636 |
| Yeo YC, Subramanian V, Kedzierski J, et al. (2002) Design and fabrication of 50-nm thin-body p-MOSFETs with a SiGe heterostructure channel Ieee Transactions On Electron Devices. 49: 279-286 |
| Yeo YC, Subramanian V, Kedzierski J, et al. (2000) Nanoscale ultra-thin-body silicon-on-insulator P-MOSFET with a SiGe/Si heterostructure channel Ieee Electron Device Letters. 21: 161-163 |
| Kedzierski J, Xuan P, Subramanian V, et al. (2000) 20 nm gate-length ultra-thin body p-MOSFET with silicide source/drain Superlattices and Microstructures. 28: 445-452 |
| Kedzierski J, Xuan P, Anderson EH, et al. (2000) Complementary silicide source/drain thin-body MOSFETs for the 20nm gate length regime Technical Digest - International Electron Devices Meeting. 57-59 |
| Tang SH, Xuan P, Bokor J, et al. (2000) Comparison of short-channel effect and offstate leakage in symmetric vs. asymmetric double gate MOSFETs Ieee International Soi Conference. 120-121 |