Najeb M. Abdul-Jabbar, Ph.D.
Affiliations: | Nuclear Engineering | University of California, Berkeley, Berkeley, CA, United States |
Area:
Irradiation Effects on Materials, Solid MechanicsGoogle:
"Najeb Abdul-Jabbar"Mean distance: 15.48
Parents
Sign in to add mentor| Brian Wirth | grad student | 2014 | UC Berkeley | |
| (Growth and Characterization of the Quasi-Binary Ga2Te 3-Ga2Se3 Semiconductor Alloy.) | ||||
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Publications
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| Abdul-Jabbar NM, Forrest TR, Gronsky R, et al. (2015) Effect of vacancies on the structure and properties of Ga |
| Abdul-Jabbar NM, Kalkan B, Huang GY, et al. (2014) The role of stoichiometric vacancy periodicity in pressure-induced amorphization of the Ga2SeTe2 semiconductor alloy Applied Physics Letters. 105 |
| Abdul-Jabbar NM, Ercius P, Gronsky R, et al. (2014) Probing the local environment of two-dimensional ordered vacancy structures in Ga2SeTe2 via aberration-corrected electron microscopy Applied Physics Letters. 104 |
| Huang GY, Abdul-Jabbar NM, Wirth BD. (2014) Theoretical study of Ga2Se3, Ga2 Te3 and Ga2 (Se1-x Tex) 3: Band-gap engineering Acta Materialia. 71: 349-369 |
| Huang GY, Abdul-Jabbar NM, Wirth BD. (2013) First-principles study of the structure and band structure of Ga2Se3. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 25: 225503 |
| Abdul-Jabbar N, Boese M, Bourret-Courchesne E, et al. (2012) Investigation of Ordered-Vacancy Structures in Ga2(Se0.33Te0.67)3 Semiconductors via High-Resolution Electron Microscopy Microscopy and Microanalysis. 18: 370-371 |
| Abdul-Jabbar NM, Bourret-Courchesne ED, Wirth BD. (2012) Single crystal growth of Ga 2 (Se xTe 1-x) 3 semiconductors and defect studies via positron annihilation spectroscopy Journal of Crystal Growth. 352: 31-34 |