Dennis M. Hausmann, Ph.D.
Affiliations: | 2002 | Harvard University, Cambridge, MA, United States |
Area:
applied mathematics, quantum mechanics, spectroscopy, intermolecular forces, solid state and materials scienceGoogle:
"Dennis Hausmann"Mean distance: 11.97
Parents
Sign in to add mentor| Roy Gerald Gordon | grad student | 2002 | Harvard | |
| (Atomic layer deposition of metal oxide thin films.) | ||||
Children
Sign in to add trainee| Rafaiel Ovanesyan Andreevich | grad student | Colorado School of Mines (E-Tree) |
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Publications
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| Xu W, Lemaire PC, Sharma K, et al. (2022) Extending growth inhibition during area-selective atomic layer deposition of AlO on aminosilane-functionalized SiO. Chemical Communications (Cambridge, England). 58: 6650-6652 |
| Merkx MJM, Angelidis A, Mameli A, et al. (2022) Relation between Reactive Surface Sites and Precursor Choice for Area-Selective Atomic Layer Deposition Using Small Molecule Inhibitors. The Journal of Physical Chemistry. C, Nanomaterials and Interfaces. 126: 4845-4853 |
| Xu W, Haeve MGN, Lemaire PC, et al. (2022) Functionalization of the SiO Surface with Aminosilanes to Enable Area-Selective Atomic Layer Deposition of AlO. Langmuir : the Acs Journal of Surfaces and Colloids |
| Liu TL, Zeng L, Nardi KL, et al. (2021) Characterizing Self-Assembled Monolayer Breakdown in Area-Selective Atomic Layer Deposition. Langmuir : the Acs Journal of Surfaces and Colloids |
| Liu TL, Nardi KL, Draeger N, et al. (2020) Effect of Multilayer versus Monolayer Dodecanethiol on Selectivity and Pattern Integrity in Area-Selective Atomic Layer Deposition. Acs Applied Materials & Interfaces |
| Xu W, Lemaire PC, Sharma K, et al. (2020) Surface reaction mechanisms during atomic layer deposition of zirconium oxide using water, ethanol, and water-ethanol mixture as the oxygen sources Journal of Vacuum Science & Technology A. 38: 012401 |
| Merkx MJM, Sandoval TE, Hausmann DM, et al. (2020) Mechanism of Precursor Blocking by Acetylacetone Inhibitor Molecules during Area-Selective Atomic Layer Deposition of SiO2 Chemistry of Materials. 32: 3335-3345 |
| Ovanesyan RA, Filatova EA, Elliott SD, et al. (2019) Atomic layer deposition of silicon-based dielectrics for semiconductor manufacturing: Current status and future outlook Journal of Vacuum Science & Technology A. 37: 060904 |
| Bobb-Semple D, Nardi KL, Draeger N, et al. (2019) Area-Selective Atomic Layer Deposition Assisted by Self-Assembled Monolayers: A Comparison of Cu, Co, W, and Ru Chemistry of Materials. 31: 1635-1645 |
| Leick N, Huijs JM, Ovanesyan RA, et al. (2019) Surface reactions of aminosilane precursors during N 2 plasma‐assisted atomic layer deposition of SiN x Plasma Processes and Polymers. 16: 1900032 |