Damon B. Farmer, Ph.D.
Affiliations: | 2007 | Harvard University, Cambridge, MA, United States |
Area:
applied mathematics, quantum mechanics, spectroscopy, intermolecular forces, solid state and materials scienceGoogle:
"Damon Farmer"Mean distance: 11.97
Parents
Sign in to add mentorRoy Gerald Gordon | grad student | 2007 | Harvard | |
(Applications of atomic layer deposition in nanoelectronic systems.) |
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Publications
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Ho PH, Farmer DB, Tulevski GS, et al. (2018) Intrinsically ultrastrong plasmon-exciton interactions in crystallized films of carbon nanotubes. Proceedings of the National Academy of Sciences of the United States of America |
Engel M, Farmer DB, Azpiroz JT, et al. (2018) Graphene-enabled and directed nanomaterial placement from solution for large-scale device integration. Nature Communications. 9: 4095 |
Demuru S, Nela L, Marchack N, et al. (2018) Scalable Nanostructured Carbon Electrode Arrays for Enhanced Dopamine Detection. Acs Sensors |
Antunez PD, Li S, Bishop DM, et al. (2018) Passivation and thickness control of highly efficient kesterite solar cells Applied Physics Letters. 113: 033903 |
Chiu KC, Falk AL, Ho PH, et al. (2017) Strong and broadly tunable plasmon resonances in thick films of aligned carbon nanotubes. Nano Letters |
Falk AL, Chiu KC, Farmer DB, et al. (2017) Coherent Plasmon and Phonon-Plasmon Resonances in Carbon Nanotubes. Physical Review Letters. 118: 257401 |
Han SJ, Tang J, Kumar B, et al. (2017) High-speed logic integrated circuits with solution-processed self-assembled carbon nanotubes. Nature Nanotechnology |
Cao Q, Tersoff J, Farmer DB, et al. (2017) Carbon nanotube transistors scaled to a 40-nanometer footprint. Science (New York, N.Y.). 356: 1369-1372 |
Price KM, Schauble KE, McGuire FA, et al. (2017) Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition. Acs Applied Materials & Interfaces |
Tang J, Cao Q, Farmer DB, et al. (2017) High-Performance Carbon Nanotube Complementary Logic With End-Bonded Contacts Ieee Transactions On Electron Devices. 64: 2744-2750 |