Anil Indluru
Affiliations: | Materials Science | Arizona State University, Tempe, AZ, United States |
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"Anil Indluru"Mean distance: 15.09
Parents
Sign in to add mentorTerry L. Alford | grad student | 2011 | Arizona State | |
(Metal-oxide based transparent conductive oxides and thin film transistors for flexible electronics.) |
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Publications
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Indluru A, Holbert KE, Alford TL. (2013) Gamma radiation effects on indium-zinc oxide thin-film transistors Thin Solid Films. 539: 342-344 |
Alford TL, Indluru A, Vemuri RNP. (2012) Mechanical and electro-mechanical stress effects on performance of flexible IZO TFTs Materials Research Society Symposium Proceedings. 1443: 21-26 |
Alford TL, Indluru A, Vemuri RNP, et al. (2012) The stability and reliability of mixed oxide-based thin film transistors under gamma irradiation Ecs Transactions. 50: 191-196 |
Lee EH, Indluru A, Allee DR, et al. (2011) Effects of gamma irradiation and electrical stress on a-Si:H thin-film transistors for flexible electronics and displays Ieee/Osa Journal of Display Technology. 7: 325-329 |
Indluru A, Venugopal SM, Allee DR, et al. (2011) Effect of anneal time on the enhanced performance of a-Si:H TFTs for future display technology Ieee/Osa Journal of Display Technology. 7: 306-310 |
Indluru A, Venugopal SM, Allee DR, et al. (2010) Threshold voltage shift variation of a-Si:H TFTs with anneal time Materials Research Society Symposium Proceedings. 1245: 403-408 |
Indluru A, Alford TL. (2010) Enhanced performance and thermal stability of a-Si:H TFTs Ecs Transactions. 33: 57-64 |
Indluru A, Alford TL. (2010) Improvement in electrical stress stability of indium zinc oxide TFTs after low temperature postanneals Electrochemical and Solid-State Letters. 13: H464-H466 |
Indluru A, Alford TL. (2010) Improved thermal stability of indium zinc oxide TFTs by low temperature post annealing Ecs Transactions. 33: 337-344 |
Indluru A, Alford TL. (2010) High-temperature stability and enhanced performance of a-Si:H TFT on flexible substrate due to improved interface quality Ieee Transactions On Electron Devices. 57: 3006-3011 |