Gordon Albert Thomas
Affiliations: | 1972-1999 | Bell Laboratories, Murray Hill, NJ, United States | |
| 1977-1981 | Princeton University, Princeton, NJ | ||
| 2000- | Physics | New Jersey Institute of Technology, Newark, NJ, United States |
Area:
optics, biophysicsWebsite:
http://physics.njit.edu/people/thomas.phpGoogle:
"Gordon A. Thomas"Bio:
http://library.nd.edu/physics/resources/genealogy/physics/documents/ThomasGA.pdf
https://www.pas.rochester.edu/graduate/alumni-1970-1979.html
Mean distance: 15.07 | S | N | B | C | P |
Parents
Sign in to add mentor| Ronald Dee Parks | grad student | 1972 | Rochester | |
| (The resistive transition of a superconductor.) | ||||
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Publications
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| Watanabe Y, Okano M, Thomas GA, et al. (2001) Size effect study by bulk crystals: Optical and DC dielectric response of oxygen vacant BaTiO3 Ferroelectrics. 259: 37-42 |
| Phillips JM, Cava RJ, Thomas GA, et al. (1995) Zinc‐indium‐oxide: A high conductivity transparent conducting oxide Applied Physics Letters. 67: 2246-2248 |
| Thomas GA, Rapkine DH, Carter SA, et al. (1994) Observation of the gap and kinetic energy in a correlated insulator. Physical Review Letters. 73: 1529-1532 |
| Rosenbaum TF, Thomas GA, Paalanen MA. (1994) Critical behavior of Si:P at the metal-insulator transition. Physical Review Letters. 72: 2121 |
| Kwo J, Carter SA, Cava RJ, et al. (1994) Transparent Conducting Films Of GaInO3 By Sputtering Mrs Proceedings. 345 |
| Phillips JM, Kwo J, Thomas GA, et al. (1994) Transparent conducting thin films of GaInO3 Applied Physics Letters. 65: 115-117 |
| Cava RJ, Phillips JM, Kwo J, et al. (1994) GaInO3: a new transparent conducting oxide Applied Physics Letters. 64: 2071-2072 |
| Bridenbaugh PM, Eckert JO, Nykolak G, et al. (1994) Hydrothermal growth and properties of KGdF4 Journal of Crystal Growth. 144: 243-252 |
| Thomas GA, Rapkine DH, Carter SA, et al. (1994) Optical properties of a correlated electron system:V2O3 Journal of Low Temperature Physics. 95: 33-38 |
| Thomas GA, Rapkine DH, Van Dover RB, et al. (1992) Large electronic-density increase on cooling a layered metal: Doped Bi2Te3. Physical Review. B, Condensed Matter. 46: 1553-1556 |