Joel A. Appelbaum
Affiliations: | 1968-1994 | Bell Laboratories, Murray Hill, NJ, United States |
Area:
Surface physicsGoogle:
"Joel Alan Appelbaum" OR "Joel A Appelbaum"Bio:
https://history.aip.org/phn/11409012.html
https://www.aps.org/programs/honors/prizes/prizerecipient.cfm?last_nm=Appelbaum&first_nm=J.&year=1979
https://ntrs.nasa.gov/archive/nasa/casi.ntrs.nasa.gov/19730018040.pdf
https://ui.adsabs.harvard.edu/abs/1967PhDT.........7A/abstract
Mean distance: 12.92 | S | N | B | C | P |
Parents
Sign in to add mentor| Morrel H. Cohen | grad student | 1966 | Chicago | |
| (Exchange model of zero-bias tunneling anomalies.) | ||||
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Publications
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| Feibelman PJ, Appelbaum JA, Hamann DR. (1979) Electronic structure of a Ti(0001) film Physical Review B. 20: 1433-1443 |
| Appelbaum JA, Baraff GA, Hamann DR, et al. (1978) Hydrogen chemisorption on the 100 (2 × 1) surfaces of Si and Ge Surface Science. 70: 654-673 |
| Appelbaum JA, Hamann DR. (1978) Theory of reconstruction induced subsurface strain - application to Si(100) Surface Science. 74: 21-33 |
| Appelbaum JA, Hamann DR. (1978) Electronic structure of the Cu(111) surface Solid State Communications. 27: 881-883 |
| Appelbaum JA, Hamann DR, Tasso KH. (1977) Hydrogen chemisorption on Si: A new type of chemisorptive bond Physical Review Letters. 39: 1487-1490 |
| Baraff GA, Appelbaum JA, Hamann DR. (1977) Self-consistent calculation of the electronic structure at an abrupt GaAs-Ge interface Physical Review Letters. 38: 237-240 |
| Appelbaum JA, Baraff GA, Hamann DR. (1977) The Si (100) surface-further studies of the pairing model Physical Review B. 15: 2408-2412 |
| Appelbaum JA, Hamann DR. (1977) Theoretical calculations of H interacting with Si(100) 1 × 1 Physical Review B. 15: 2006-2011 |
| Appelbaum JA, Hamann DR. (1976) The electronic structure of solid surfaces Reviews of Modern Physics. 48: 479-496 |
| Appelbaum JA, Baraff GA, Hamann DR. (1976) Secondary Reconstruction on the Si(100) Surface via a Charge-Density Wave Physical Review Letters. 36: 450-452 |