Paul Handler
Affiliations: | 1954-1998 | Physics | University of Illinois, Urbana-Champaign, Urbana-Champaign, IL |
Area:
optical properties of semiconductorsWebsite:
http://physics.illinois.edu/people/memorials/handler.aspGoogle:
"Paul Handler"Bio:
(1929 - 1998)
https://www.gf.org/fellows/all-fellows/paul-handler/
DOI: 10.1063/1.1743181
Mean distance: 11.53 | S | N | B | C | P |
Parents
Sign in to add mentorClyde Allen Hutchison | grad student | 1954 | Chicago (Chemistry Tree) | |
(The magnetic susceptibilities of some uranium compounds.) | ||||
John Bardeen | post-doc | UIUC |
Children
Sign in to add traineeLing Y. Wei | grad student | 1958 | UIUC |
Albert J. Libchaber | grad student | 1959 | UIUC |
David Erik Aspnes | grad student | 1965 | UIUC |
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Publications
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Handler P. (1986) Possible association between the climatic effects of stratospheric aerosols and sea surface temperatures in the eastern tropical Pacific Ocean. Journal of Climatology. 6: 31-41 |
Handler P. (1984) Corn yields in the United States and sea surface temperature anomalies in the equatorial pacific ocean during the period 1868-1982 Agricultural and Forest Meteorology. 31: 25-32 |
Grover JW, Handler P. (1974) Electroreflectance of silicon Physical Review B. 9: 2600-2606 |
Mack SA, Handler P. (1973) Electroreflectance of strontium titanate Surface Science. 37: 280-287 |
Aspnes DE, Handler P, Blossey DF. (1968) Interband dielectric properties of solids in an electric field Physical Review. 166: 921-933 |
Hamakawa Y, Handler P, Germano F. (1967) Line shape of the electroreflectance spectra in germanium Physics Letters A. 25: 617-619 |
Handler P, Aspnes DE. (1966) Electric-field modulation of the vibrational absorption of OH- in KBr Physical Review Letters. 17: 1095-1097 |
Frova A, Handler P, Germano FA, et al. (1966) Electro-absorption effects at the band edges of silicon and germanium Physical Review. 145: 575-583 |
Proix F, Handler P. (1966) Surface conductance of cleaved germanium surfaces Surface Science. 5: 81-96 |
Aspnes DE, Handler P. (1966) Surface states on cleaved (111) silicon surfaces Surface Science. 4: 353-380 |