Nuo Xu, Ph.D.
Affiliations: | 2012 | Electrical Engineering & Computer Sciences | University of California, Berkeley, Berkeley, CA, United States |
Area:
NanofabricationGoogle:
"Nuo Xu"Mean distance: 17.34
Parents
Sign in to add mentor| Tsu-Jae King Liu | grad student | 2012 | UC Berkeley | |
| (Effectiveness of Strain Solutions for Next-Generation MOSFETs.) | ||||
BETA: Related publications
See more...
Publications
|
You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect. |
| Long Y, Huang JZ, Huang Q, et al. (2020) Piezoelectric Tunnel FET With a Steep Slope Ieee Electron Device Letters. 41: 948-951 |
| Luo S, Xu N, Wang Y, et al. (2020) Thermally Assisted Skyrmion Memory (TA-SKM) Ieee Electron Device Letters. 41: 932-935 |
| Long Y, Huang JZ, Huang Q, et al. (2019) Exploring the Designs of p-Type Piezoelectric FinFETs Based on NEGF Transport Simulations Comprising Phonon Scattering Ieee Transactions On Electron Devices. 66: 4982-4988 |
| Zhou J, Han G, Xu N, et al. (2019) Experimental Validation of Depolarization Field Produced Voltage Gains in Negative Capacitance Field-Effect Transistors Ieee Transactions On Electron Devices. 66: 4419-4424 |
| Peng Y, Xu N, Liu TK, et al. (2019) Nanocrystal-Embedded-Insulator (NEI) Ferroelectric Field-Effect Transistor Featuring Low Operating Voltages and Improved Synaptic Behavior Ieee Electron Device Letters. 40: 1933-1936 |
| Liu H, Wang C, Han G, et al. (2019) ZrO2 Ferroelectric FET for Non-volatile Memory Application Ieee Electron Device Letters. 40: 1419-1422 |
| Luo S, Xu N, Guo Z, et al. (2019) Voltage-Controlled Skyrmion Memristor for Energy-Efficient Synapse Applications Ieee Electron Device Letters. 40: 635-638 |
| Zhou J, Han G, Xu N, et al. (2019) Incomplete Dipoles Flipping Produced Near Hysteresis-Free Negative Capacitance Transistors Ieee Electron Device Letters. 40: 329-332 |
| Peng Y, Xiao W, Han G, et al. (2019) Nanocrystal-Embedded-Insulator Ferroelectric Negative Capacitance FETs With Sub-kT/q Swing Ieee Electron Device Letters. 40: 9-12 |
| Luo S, Song M, Li X, et al. (2018) Reconfigurable Skyrmion Logic Gates. Nano Letters |