Tejas Krishnamohan, Ph.D.
Affiliations: | 2006 | Stanford University, Palo Alto, CA |
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"Tejas Krishnamohan"Mean distance: 18.66
Parents
Sign in to add mentor| Krishna C. Saraswat | grad student | 2006 | Stanford | |
| (Physics and technology of high mobility, strained germanium channel, heterostructure MOSFETs.) | ||||
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Publications
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| Kuzum D, Park JH, Krishnamohan T, et al. (2011) The effect of donor/acceptor nature of interface traps on Ge MOSFET characteristics Ieee Transactions On Electron Devices. 58: 1015-1022 |
| Kuzum D, Krishnamohan T, Nainani A, et al. (2011) High-mobility Ge N-MOSFETs and mobility degradation mechanisms Ieee Transactions On Electron Devices. 58: 59-66 |
| Nainani A, Yuan Z, Krishnamohan T, et al. (2011) InxGa1-xSb channel p-metal-oxide-semiconductor field effect transistors: Effect of strain and heterostructure design Journal of Applied Physics. 110 |
| Kuzum D, Park JH, Krishnamohan T, et al. (2011) Effect of interfacial oxide on Ge MOSCAP and N-MOSFET characteristics Microelectronic Engineering. 88: 3428-3431 |
| Raghunathan S, Krishnamohan T, Saraswat K. (2010) Novel SiGe source/drain for reduced parasitic resistance in Ge NMOS Ecs Transactions. 33: 871-876 |
| Nainani A, Yuan Z, Krishnamohan T, et al. (2010) Optimal design of III-V heterostructure MOSFETs International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 103-106 |
| Nainani A, Irisawa T, Yuan Z, et al. (2010) Development of high-k dielectric for antimonides and a sub 350°C III-V pMOSFET outperforming Germanium Technical Digest - International Electron Devices Meeting, Iedm. 6.4.1-6.4.4 |
| Krishnamohan T, Kim D, Saraswat KC. (2010) Properties and trade-offs of compound semiconductor MOSFETs Fundamentals of Iii-V Semiconductor Mosfets. 7-30 |
| Nainani A, Kobayashi M, Witte D, et al. (2009) Investigation of Strained-Sb Hetrostructures with High Hole Mobility The Japan Society of Applied Physics |
| Ramaswamy N, Yeh CC, Krishnamohan T, et al. (2009) Multi-Layer High-K Tunnel Barrier for a Voltage Scaled NAND-Type Flash Cell 2009 Ieee Workshop On Microelectronics and Electron Devices, Wmed 2009. 49-51 |