Raghunath Murali, Ph.D.
Affiliations: | 2004 | Georgia Institute of Technology, Atlanta, GA |
Area:
Microelectronics/MicrosystemsGoogle:
"Raghunath Murali"Mean distance: 20.07
Parents
Sign in to add mentorJames D. Meindl | grad student | 2004 | Georgia Tech | |
(Scaling opportunities for bulk accumulation and inversion MOSFETs for gigascale integration.) |
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Publications
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Zheng P, Bryan SE, Yang Y, et al. (2013) Hydrogenation of graphene nanoribbon edges: Improvement in carrier transport Ieee Electron Device Letters. 34: 707-709 |
Bryan SE, Brenner K, Yang Y, et al. (2012) P-type electrical transport of chemically doped epitaxial graphene nanoribbons Ieee Electron Device Letters. 33: 866-868 |
Yang Y, Brenner K, Murali R. (2012) The influence of atmosphere on electrical transport in graphene Carbon. 50: 1727-1733 |
Brenner K, Yang Y, Murali R. (2012) Edge doping of graphene sheets Carbon. 50: 637-645 |
Yang Y, Murali R. (2011) Binding mechanisms of molecular oxygen and moisture to graphene Applied Physics Letters. 98: 93116 |
Brenner K, Murali R. (2011) In situ doping of graphene by exfoliation in a nitrogen ambient Applied Physics Letters. 98 |
Bryan SE, Yang Y, Murali R. (2011) Conductance of Epitaxial Graphene Nanoribbons: Influence of Size Effects and Substrate Morphology Journal of Physical Chemistry C. 115: 10230-10235 |
Yang Y, Murali R. (2010) Impact of Size Effect on Graphene Nanoribbon Transport Ieee Electron Device Letters. 31: 237-239 |
Meindl J, Naeemi A, Bakir M, et al. (2010) Nanoelectronics in retrospect, prospect and principle Digest of Technical Papers - Ieee International Solid-State Circuits Conference. 53: 31-35 |
Brenner K, Murali R. (2010) Single step, complementary doping of graphene Applied Physics Letters. 96 |