Anne S. Verhulst, Ph.D.
Affiliations: | 2005 | Stanford University, Palo Alto, CA |
Area:
AMO Physics, Condensed Matter, Electrical Engineering, Information Sci/Tech, Laser Physics, Nano Sci/Eng, Photonics, Quantum Engineering, Quantum Information, Quantum Many-Body Physics, Quantum Optics, Statistical PhysicsGoogle:
"Anne Verhulst"Mean distance: 18.08
Parents
Sign in to add mentor| Yoshihisa Yamamoto | grad student | 2005 | Stanford | |
| (Optical pumping experiments to increase the polarization in nuclear-spin based quantum computers.) | ||||
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Publications
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| Bizindavyi J, Verhulst AS, Soree B, et al. (2020) Signature of Ballistic Band-Tail Tunneling Current in Tunnel FET Ieee Transactions On Electron Devices. 67: 3486-3491 |
| Verhulst AS, Saeidi A, Stolichnov I, et al. (2020) Corrections to “Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization” Ieee Transactions On Electron Devices. 67: 3017-3017 |
| Xiang Y, Verhulst AS, Yakimets D, et al. (2019) Process-Induced Power-Performance Variability in Sub-5-nm III–V Tunnel FETs Ieee Transactions On Electron Devices. 66: 2802-2808 |
| Bizindavyi J, Verhulst AS, Verreck D, et al. (2019) Large Variation in Temperature Dependence of Band-to-Band Tunneling Current in Tunnel Devices Ieee Electron Device Letters. 40: 1864-1867 |
| Mohammed M, Verhulst AS, Verreck D, et al. (2019) Phonon-assisted tunneling in direct-bandgap semiconductors Journal of Applied Physics. 125: 15701 |
| Verreck D, Verhulst AS, Xiang Y, et al. (2018) Built-In Sheet Charge As an Alternative to Dopant Pockets in Tunnel Field-Effect Transistors` Ieee Journal of the Electron Devices Society. 6: 658-663 |
| Bizindavyi J, Verhulst AS, Smets Q, et al. (2018) Band-Tails Tunneling Resolving the Theory-Experiment Discrepancy in Esaki Diodes Ieee Journal of the Electron Devices Society. 6: 633-641 |
| Gupta S, Simoen E, Loo R, et al. (2018) Impact of band to band tunneling in In0.53Ga0.47As tunnel diodes on the deep level transient spectra Applied Physics Letters. 113: 232101 |
| Verreck D, Verhulst AS, Put MLVd, et al. (2018) Self-consistent procedure including envelope function normalization for full-zone Schrödinger-Poisson problems with transmitting boundary conditions Journal of Applied Physics. 124: 204501 |
| Kazzi SE, Alian A, Hsu B, et al. (2018) Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode Journal of Crystal Growth. 484: 86-91 |