Sanjay Krishna

Affiliations: 
Electrical & Computer Engineering University of New Mexico, Albuquerque, NM, United States 
Area:
Infrared imaging
Website:
http://www.ece.unm.edu/faculty-staff/electrical-and-computer/sanjay-krishna.html
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"Sanjay Krishna"
Mean distance: 13.24
 

Parents

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Pallab K. Bhattacharya grad student 2001 University of Michigan
 (Study of quantum confined energy levels in self-organized indium(gallium,aluminum)arsenide/(gallium,aluminum)arsenide quantum dots and their application to mid-infrared sources and detectors.)
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Publications

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Lee SC, Kang JH, Park Q, et al. (2020) Quantum efficiency of plasmonic-coupled quantum dot infrared photodetectors for single- color detection: the upper limit of plasmonic enhancement. Optics Express. 28: 7618-7633
Braga OM, Delfino CA, Kawabata RMS, et al. (2020) Surface Passivation of InGaAs/InP p-i-n Photodiodes Using Epitaxial Regrowth of InP Ieee Sensors Journal. 20: 9234-9244
Casias LK, Morath CP, Steenbergen EH, et al. (2020) Vertical carrier transport in strain-balanced InAs/InAsSb type-II superlattice material Applied Physics Letters. 116: 182109
Taghipour Z, Rogers V, Ringel B, et al. (2020) Photoluminescence spectroscopy of metamorphic InAsSb on GaAs and Si Journal of Luminescence. 228: 117581
Rogers V, Deitz JI, Blumer A, et al. (2020) InAs1−ySby virtual substrates grown by MOCVD for long wave infrared detectors Journal of Crystal Growth. 535: 125552
Dev S, Wang Y, Kim K, et al. (2019) Measurement of carrier lifetime in micron-scaled materials using resonant microwave circuits. Nature Communications. 10: 1625
Foteinopoulou S, Devarapu GCR, Subramania GS, et al. (2019) Phonon-polaritonics: enabling powerful capabilities for infrared photonics Nanophotonics. 8: 2129-2175
Taghipour Z, Lee S, Myers S, et al. (2019) Temperature-Dependent Minority-Carrier Mobility in p -Type InAs / GaSb Type-II-Superlattice Photodetectors Physical Review Applied. 11
Han IS, Kim JS, Shin JC, et al. (2019) Photoluminescence study of InAs/InGaAs sub-monolayer quantum dot infrared photodetectors with various numbers of multiple stack layers Journal of Luminescence. 207: 512-519
Casias LK, Morath CP, Steenbergen EH, et al. (2019) Carrier concentration and transport in Be-doped InAsSb for infrared sensing applications Infrared Physics & Technology. 96: 184-191
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