Alan Carter Seabaugh
Affiliations: | Electrical Engineering | University of Notre Dame, Notre Dame, IN, United States |
Area:
NanoelectronicsWebsite:
https://engineering.nd.edu/profiles/aseabaughGoogle:
"Alan Carter Seabaugh"Bio:
http://news.nd.edu/for-the-media/nd-experts/faculty/alan-seabaugh/
http://www3.nd.edu/~nano/group/group.htm
http://library.nd.edu/physics/resources/genealogy/physics/documents/SeabaughAC.pdf
Mean distance: 17.55 | S | N | B | C | P |
Parents
Sign in to add mentor| James D. Oliver | grad student | 1985 | UVA | |
| (Transient-photoresistance spectroscopy of deep levels in high resistivity semiconductors.) | ||||
Children
Sign in to add trainee| Yan Yan | grad student | 2003 | Notre Dame |
| Qingmin Liu | grad student | 2006 | Notre Dame |
| Wei Zhao | grad student | 2006 | Notre Dame |
| Zoltan Racz | grad student | 2007 | Notre Dame |
| Jialin Zhao | grad student | 2007 | Notre Dame |
| Surajit Sutar | grad student | 2009 | Notre Dame |
| Dana C. Wheeler | grad student | 2009 | Notre Dame |
| Qin Zhang | grad student | 2009 | Notre Dame |
| Sajid Kabeer | grad student | 2010 | Notre Dame |
| Bin Wu | grad student | 2010 | Notre Dame |
| Hao Lu | grad student | 2014 | Notre Dame |
| Timothy J. Vasen | grad student | 2014 | Notre Dame |
| Sara Fathipour | grad student | 2017 | Notre Dame |
| Cristobal Alessandri | grad student | 2019 | Notre Dame |
| Mina Asghari Heidarlou | grad student | 2019 | Notre Dame |
| Paolo Paletti | grad student | 2019 | Notre Dame |
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Publications
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| Fathipour S, Paletti P, Fullerton-Shirey SK, et al. (2020) Electric-double-layer p-i-n junctions in WSe. Scientific Reports. 10: 12890 |
| Asghari Heidarlou M, Paletti P, Jariwala B, et al. (2020) Batch-Fabricated WSe₂-on-Sapphire Field-Effect Transistors Grown by Chemical Vapor Deposition Ieee Transactions On Electron Devices. 67: 1839-1844 |
| Chaney A, Turski H, Nomoto K, et al. (2020) Gallium nitride tunneling field-effect transistors exploiting polarization fields Applied Physics Letters. 116: 073502 |
| Paletti P, Fathipour S, Remškar M, et al. (2020) Quantitative, experimentally-validated, model of MoS2 nanoribbon Schottky field-effect transistors from subthreshold to saturation Journal of Applied Physics. 127: 65705 |
| Alessandri C, Pandey P, Abusleme A, et al. (2019) Monte Carlo Simulation of Switching Dynamics in Polycrystalline Ferroelectric Capacitors Ieee Transactions On Electron Devices. 66: 3527-3534 |
| Ameen TA, Ilatikhameneh H, Fay P, et al. (2019) Alloy Engineered Nitride Tunneling Field-Effect Transistor: A Solution for the Challenge of Heterojunction TFETs Ieee Transactions On Electron Devices. 66: 736-742 |
| Alessandri C, Pandey P, Abusleme A, et al. (2018) Switching Dynamics of Ferroelectric Zr-Doped HfO2 Ieee Electron Device Letters. 39: 1780-1783 |
| Lu H, Paletti P, Li W, et al. (2018) Tunnel FET Analog Benchmarking and Circuit Design Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 4: 19-25 |
| Kazanov DR, Poshakinskiy AV, Davydov VY, et al. (2018) Multiwall MoS2 tubes as optical resonators Applied Physics Letters. 113: 101106 |
| Xu K, Lu H, Kinder EW, et al. (2017) Monolayer Solid State Electrolyte for Electric Double Layer Gating of Graphene Field-Effect Transistors. Acs Nano |