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Frank Hunte, Ph.D.

Affiliations: 
2004 University of Minnesota, Twin Cities, Minneapolis, MN 
Area:
Condensed Matter Physics, Materials Science Engineering
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E. Dan Dahlberg grad student 2004 UMN
 (Determination of exchange anisotropy by ac-AMR and planar Hall effect.)

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Akouala CR, Kumar R, Punugupati S, et al. (2019) Planar Hall effect and anisotropic magnetoresistance in semiconducting and conducting oxide thin films Applied Physics A. 125: 1-12
Punugupati S, Kumar R, Nori S, et al. (2016) Structural, magnetic and magnetotransport properties of bi-epitaxial La0.7Sr0.3MnO3 (110) thin films integrated on Si (001) Acta Materialia. 106: 40-47
Ishmael SA, Rogers S, Hunte F, et al. (2015) Current Density and Quench Behavior of MgB 2/Ga Composite Wires Ieee Transactions On Applied Superconductivity. 25
Lee YF, Kumar R, Hunte F, et al. (2015) Microstructure and transport properties of epitaxial topological insulator Bi2Se3 thin films grown on MgO (100), Cr2O3 (0001), and Al2O3 (0001) templates Journal of Applied Physics. 118
Punugupati S, Narayan J, Hunte F. (2015) Room temperature ferromagnetism in epitaxial Cr<inf>2</inf>O<inf>3</inf> thin films grown on r-sapphire Journal of Applied Physics. 117
Kumar R, Brom JE, Redwing JM, et al. (2015) Magnetotransport phenomena in Bi2Se3 thin film topological insulators grown by hybrid physical chemical vapor deposition Journal of Applied Physics. 117
Lee YF, Kumar R, Hunte F, et al. (2015) Control of intrinsic defects and magnetotransport properties of Bi2Se3/c-sapphire epitaxial heterostructures Acta Materialia. 95: 57-64
Punugupati S, Narayan J, Hunte F. (2014) Strain induced ferromagnetism in epitaxial Cr2O3 thin films integrated on Si(001) Applied Physics Letters. 105
Singamaneni SR, Punugupati S, Prater JT, et al. (2014) Ferroelectric and ferromagnetic properties in BaTiO3 thin films on Si (100) Journal of Applied Physics. 116
Punugupati S, Temizer NK, Narayan J, et al. (2014) Structural and resistance switching properties of epitaxial Pt/ZnO/TiN/Si(001) heterostructures Journal of Applied Physics. 115
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