Alexander A. Demkov

Affiliations: 
Physics University of Texas at Austin, Austin, Texas, U.S.A. 
Area:
Materials Science Engineering, Condensed Matter Physics, Electronics and Electrical Engineering
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"Alexander Demkov"
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Publications

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Wu H, Ponath P, Lin EL, et al. (2020) Dielectric breakdown in epitaxial BaTiO3 thin films Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 38: 44007
Lin EL, Posadas AB, Zheng L, et al. (2020) Epitaxial integration of ferroelectric and conductive perovskites on silicon Journal of Vacuum Science and Technology. 38: 22403
Chen P, Hadamek T, Kwon S, et al. (2020) Role of template layers for heteroepitaxial growth of lanthanum oxide on GaN(0001) via atomic layer deposition Journal of Vacuum Science and Technology. 38: 12403
Li W, Gao L, Demkov AA. (2020) Controlling spin-polarized carriers at the SrTiO 3 / EuO interface via the ferroelectric field effect Physical Review B. 102: 35308
Hadamek T, Rangan S, Viereck J, et al. (2020) Stoichiometry, band alignment, and electronic structure of Eu2O3 thin films studied by direct and inverse photoemission: A reevaluation of the electronic band structure Journal of Applied Physics. 127: 074101
Guo W, Posadas AB, Demkov AA. (2020) Deal–Grove-like thermal oxidation of Si (001) buried under a thin layer of SrTiO3 Journal of Applied Physics. 127: 055302
Ortmann JE, Duncan MA, Demkov AA. (2019) Designing near-infrared electro-optical devices from the SrTiO 3 /LaAlO 3 materials system Optical Materials Express. 9: 2982-2993
Chen P, Lam CH, Edmondson B, et al. (2019) Epitaxial BaSnO3 and SrSnO3 perovskite growth on SrTiO3(001) via atomic layer deposition Journal of Vacuum Science & Technology A. 37: 050902
Gao L, Guo W, Posadas A, et al. (2019) Electron accumulation and charge neutrality level at the Eu/EuO interface Physical Review Materials. 3
Li W, Posadas AB, Demkov AA. (2019) Band offset modulation in Si-EuO heterostructures via controlled interface formation Physical Review B. 100
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