Gyan Prakash, Ph.D.
Affiliations: | 2010 | Physics | Purdue University, West Lafayette, IN, United States |
Area:
Condensed Matter Physics, Mechanical Engineering, NanotechnologyGoogle:
"Gyan Prakash"Mean distance: (not calculated yet)
Parents
Sign in to add mentorRonald Reifenberger | grad student | 2010 | Purdue | |
(Parametric resonance based atomic force microscopy and mass-sensing in ambient and liquid environments.) |
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Publications
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Prakash G, Srivastava RK, Gupta SN, et al. (2019) Plasmon-induced efficient hot carrier generation in graphene on gold ultrathin film with periodic array of holes: Ultrafast pump-probe spectroscopy. The Journal of Chemical Physics. 151: 234712 |
Anand B, Karakaya M, Prakash G, et al. (2015) Dopant-configuration controlled carrier scattering in graphene Rsc Advances. 5: 59556-59563 |
Prakash G, Raman A, Rhoads J, et al. (2012) Parametric noise squeezing and parametric resonance of microcantilevers in air and liquid environments. The Review of Scientific Instruments. 83: 065109 |
Kurra N, Prakash G, Basavaraja S, et al. (2011) Charge storage in mesoscopic graphitic islands fabricated using AFM bias lithography. Nanotechnology. 22: 245302 |
Pandey DK, Chung TF, Prakash G, et al. (2011) Folding and cracking of graphene oxide sheets upon deposition Surface Science. 605: 1669-1675 |
Pandey DK, Chung TF, Prakash G, et al. (2011) WITHDRAWN: Folding and cracking of graphene oxide sheets upon deposition Surface Science |
Prakash G, Bolen ML, Colby R, et al. (2010) Nanomanipulation of ridges in few-layer epitaxial graphene grown on the carbon face of 4H-SiC New Journal of Physics. 12 |
Prakash G, Capano MA, Bolen ML, et al. (2010) AFM study of ridges in few-layer epitaxial graphene grown on the carbon-face of 4H-SiC (0001̄) Carbon. 48: 2383-2393 |
Prakash G, Hu S, Raman A, et al. (2009) Theoretical basis of parametric-resonance-based atomic force microscopy Physical Review B - Condensed Matter and Materials Physics. 79 |
Wu YQ, Ye PD, Capano MA, et al. (2008) Top-gated graphene field-effect-transistors formed by decomposition of SiC Applied Physics Letters. 92 |