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Yuan Taur

Affiliations: 
Electrical Engineering (Applied Physics) University of California, San Diego, La Jolla, CA 
Area:
Electronics and Electrical Engineering
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"Yuan Taur"
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Ming Cai grad student 2006 UCSD
Xiaoping Liang grad student 2006 UCSD
Huaxin Lu grad student 2006 UCSD
Minjian Liu grad student 2007 UCSD
Wei-Yuan Lu grad student 2007 UCSD
Jooyoung Song grad student 2010 UCSD
Han-Ping Chen grad student 2014 UCSD
Zhongjie Ren grad student 2018-2020 UCSD

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Publications

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Ren Z, Taur Y. (2020) Non-GCA modeling of near threshold I-V characteristics of DG MOSFETs Solid-State Electronics. 166: 107766
Kavrik MS, Bostwick A, Rotenberg E, et al. (2019) Understanding the Mechanism of Electronic Defects Suppression Enabled by Non-Idealities in Atomic Layer Deposition. Journal of the American Chemical Society
Kavrik MS, Ercius P, Cheung J, et al. (2019) Engineering high-k/SiGe interface with ALD oxide for selective GeOx reduction. Acs Applied Materials & Interfaces
Taur Y, Choi W, Zhang J, et al. (2019) A Non-GCA DG MOSFET Model Continuous into the Velocity Saturation Region Ieee Transactions On Electron Devices. 66: 1160-1166
Kavrik MS, Thomson E, Chagarov E, et al. (2018) Ultra-Low defect density at sub-0.5 nm HfO2/SiGe interfaces via selective oxygen scavenging. Acs Applied Materials & Interfaces
Pandey N, Lin H, Nandi A, et al. (2018) Modeling of Short-Channel Effects in DG MOSFETs: Green’s Function Method Versus Scale Length Model Ieee Transactions On Electron Devices. 65: 3112-3119
Taur Y, Lin H. (2018) Modeling of DG MOSFET $I$ – $V$ Characteristics in the Saturation Region Ieee Transactions On Electron Devices. 65: 1714-1720
Parihar MS, Lee KH, Park HJ, et al. (2018) Insight into carrier lifetime impact on band-modulation devices Solid-State Electronics. 143: 41-48
Cristoloveanu S, Lee K, Parihar M, et al. (2018) A review of the Z 2 -FET 1T-DRAM memory: Operation mechanisms and key parameters Solid-State Electronics. 143: 10-19
Wu J, Taur Y. (2017) An All-Region I–V Model for 1-D Nanowire MOSFETs Ieee Transactions On Nanotechnology. 16: 1062-1066
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