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Lin Dong, Ph.D.

Affiliations: 
2013 Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering, Nanotechnology
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"Lin Dong"
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Peide Ye grad student 2013 Purdue
 (Non-silicon mosfets and circuits with atomic layer deposited higher-kappa dielectrics.)

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Publications

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Edmonds M, Sardashti K, Wolf S, et al. (2017) Low temperature thermal ALD of a SiNx interfacial diffusion barrier and interface passivation layer on SixGe1- x(001) and SixGe1- x(110). The Journal of Chemical Physics. 146: 052820
Xu D, Chu K, Diaz JA, et al. (2016) 0.1-μm InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71-76 and 81-86 GHz: Impact of Passivation and Gate Recess Ieee Transactions On Electron Devices. 63: 3076-3083
Chou H, O'Connor E, O'Mahony A, et al. (2016) Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3 Journal of Applied Physics. 120
Sardashti K, Hu KT, Tang K, et al. (2016) Nitride passivation of the interface between high-k dielectrics and SiGe Applied Physics Letters. 108
Wu H, Si M, Dong L, et al. (2015) Germanium nMOSFETs with recessed channel and S/D: Contact, scalability, interface, and drain current exceeding 1 A/mm Ieee Transactions On Electron Devices. 62: 1419-1426
Xu D, Chu KK, Diaz JA, et al. (2015) 0.1-μm atomic layer deposition Al2O3 passivated InAlN/GaN high electron-mobility transistors for E-band power amplifiers Ieee Electron Device Letters. 36: 442-444
Wang X, Dong L, Zhang J, et al. (2013) Heteroepitaxy of La2O3 and La(2-x)Y(x)O3 on GaAs (111)A by atomic layer deposition: achieving low interface trap density. Nano Letters. 13: 594-9
Dong L, Wang XW, Zhang JY, et al. (2013) GaAs enhancement-mode NMOSFETs enabled by atomic layer epitaxial La 1.8Y0.2O3 as dielectric Ieee Electron Device Letters. 34: 487-489
Xu K, Sio H, Kirillov OA, et al. (2013) Band offset determination of atomic-layer-deposited Al2O3 and HfO2 on InP by internal photoemission and spectroscopic ellipsometry Journal of Applied Physics. 113: 24504
Chou HY, Afanas'ev VV, Houssa M, et al. (2012) Electron band alignment at the interface of (100)InSb with atomic-layer deposited Al 2O 3 Applied Physics Letters. 101
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