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Yung K. Yeo

Affiliations: 
Engineering Physics (ENP) Air Force Institute of Technology 
Area:
Materials Science Engineering, Optics Physics, Electricity and Magnetism Physics
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"Yung Yeo"
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Children

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James A. Fellows grad student 2001 Air Force Institute of Technology
Michael R. Hogsed grad student 2005 Air Force Institute of Technology
Jeremy A. Raley grad student 2005 Air Force Institute of Technology
Jean Wei grad student 2011 Air Force Institute of Technology

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Publications

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Ryu M, Harris TR, Wang B, et al. (2019) Temperature-Dependent Photoluminescence Studies of Ge1−ySny (y = 4.3%–9.0%) Grown on Ge-Buffered Si: Evidence for a Direct Bandgap Cross-Over Point Journal of the Korean Physical Society. 75: 577-585
Wang B, Fang Z, Claflin B, et al. (2018) Electrical characterization and deep-level transient spectroscopy of Ge0.873Si0.104Sn0.023 photodiode grown on Ge platform by ultra-high vacuum chemical vapor deposition Thin Solid Films. 654: 77-84
Jo H, Kim JS, Ryu M, et al. (2018) Investigation of hydrogen inductively coupled plasma treatment effect for Ge0.938Sn0.062/Ge/Si film using photoreflectance spectroscopy Thin Solid Films. 645: 345-350
Harris TR, Ryu MY, Yeo YK, et al. (2016) Direct bandgap cross-over point of Ge1-ySny grown on Si estimated through temperature-dependent photoluminescence studies Journal of Applied Physics. 120
Jo HJ, Kim GH, Kim JS, et al. (2016) Observation of temperature-dependent heavy- and light-hole split direct bandgap and tensile strain from Ge0.985Sn0.015 using photoreflectance spectroscopy Current Applied Physics. 16: 83-87
Jo HJ, So MG, Kim JS, et al. (2015) Temperature-dependent direct transition energy in Ge0.99Sn0.01 film grown on Si measured by photoreflectance spectroscopy Thin Solid Films. 591: 295-300
Harris TR, Yeo YK, Ryu MY, et al. (2014) Observation of heavy- and light-hole split direct bandgap photoluminescence from tensile-strained GeSn (0.03% Sn) Journal of Applied Physics. 116
Harris TR, Ryu MY, Yeo YK, et al. (2014) Electrical characterization studies of p-type Ge, Ge1-ySn y, and Si0.09Ge0.882Sn0.028 grown on n-Si substrates Current Applied Physics. 14: S123-S128
Moore EA, Yeo YK, Hengehold RL, et al. (2009) Activation studies of Si-implanted Al0.45Ga0.55N by using cathodoluminescence and temperature-dependent hall-effect measurements Journal of the Korean Physical Society. 55: 2465-2469
Raley JA, Yeo Y, Hengehold RL, et al. (2008) Magnetic Properties of Transition Metal-implanted ZnO Nanotips Grown on Sapphire and Quartz Journal of Magnetics. 13: 19-22
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