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Chad Fulk, Ph.D.

Affiliations: 
2007 University of Illinois at Chicago, Chicago, IL, United States 
Area:
Condensed Matter Physics, Materials Science Engineering
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Sivalingam Sivananthan grad student 2007 University of Illinois, Chicago
 (Lead tin selenide(211)/cadmium telluride(211)boron/silicon(211) interfaces.)

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Publications

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Lamarre P, Fulk C, D'Orsogna D, et al. (2009) Characterization of dislocations in HgCdTe heteroepitaxial layers using a new substrate removal technique Journal of Electronic Materials. 38: 1746-1754
Wang XJ, Fulk C, Zhao FH, et al. (2008) Characterization of PbSnSe/CdTe/Si (211) epilayers grown by molecular beam epitaxy Journal of Electronic Materials. 37: 1200-1204
Chang Y, Becker CR, Grein CH, et al. (2008) Surface morphology and defect formation mechanisms for HgCdTe (211)B grown by molecular beam epitaxy Journal of Electronic Materials. 37: 1171-1183
Chang Y, Fulk C, Zhao J, et al. (2007) Molecular beam epitaxy growth of HgCdTe for high performance infrared photon detectors Infrared Physics and Technology. 50: 284-290
Sood AK, Puri YR, Becker L, et al. (2006) Development of high performance radiation hardened antireflection coatings for LWIR and multicolor IR focal plane arrays Proceedings of Spie - the International Society For Optical Engineering. 6206
Boieriu P, Grein CH, Velicu S, et al. (2006) Effects of hydrogen on majority carrier transport and minority carrier lifetimes in long wavelength infrared HgCdTe on Si Applied Physics Letters. 88
Fulk C, Sivananthan S, Zavitz D, et al. (2006) The structure of the Si (211) surface Journal of Electronic Materials. 35: 1449-1454
Boieriu P, Grein CH, Garland J, et al. (2006) Effects of hydrogen on majority carrier transport and minority carrier lifetimes in long-wavelength infrared HgCdTe on Si Journal of Electronic Materials. 35: 1385-1390
Bommena R, Fulk C, Zhao J, et al. (2005) Cadmium telluride growth on patterned substrates for mercury cadmium telluride infrared detectors Journal of Electronic Materials. 34: 704-709
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