Ming-Wei Lin, Ph.D.
Affiliations: | 2012 | Physics | Wayne State University, Detroit, MI, United States |
Area:
General Physics, Condensed Matter PhysicsGoogle:
"Ming-Wei Lin"Mean distance: (not calculated yet)
Parents
Sign in to add mentorZhixian Zhou | grad student | 2012 | Wayne State | |
(The electrical transport study of graphene nanoribbons and 2D materials beyond graphene.) |
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Publications
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Iberi V, Liang L, Ievlev AV, et al. (2016) Nanoforging Single Layer MoSe2 Through Defect Engineering with Focused Helium Ion Beams. Scientific Reports. 6: 30481 |
Mahjouri-Samani M, Liang L, Oyedele AD, et al. (2016) Tailoring Vacancies Far Beyond Intrinsic Levels Changes the Carrier Type in Monolayer MoSe2-x Crystals. Nano Letters |
Wang K, Huang B, Tian M, et al. (2016) Interlayer Coupling in Twisted WSe2/WS2 Bilayer Heterostructures Revealed by Optical Spectroscopy. Acs Nano |
Li X, Lin MW, Lin J, et al. (2016) Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy. Science Advances. 2: e1501882 |
Lin MW, Kravchenko II, Fowlkes J, et al. (2016) Thickness-dependent charge transport in few-layer MoS2 field-effect transistors. Nanotechnology. 27: 165203 |
Li X, Lin MW, Puretzky AA, et al. (2016) Persistent photoconductivity in two-dimensional Mo1-xWxSe2-MoSe2 van der Waals heterojunctions Journal of Materials Research. 31: 923-930 |
Li X, Basile L, Huang B, et al. (2015) Van der Waals Epitaxial Growth of Two-Dimensional Single-Crystalline GaSe Domains on Graphene. Acs Nano |
Mahjouri-Samani M, Lin MW, Wang K, et al. (2015) Patterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors. Nature Communications. 6: 7749 |
Boulesbaa A, Huang B, Wang K, et al. (2015) Observation of two distinct negative trions in tungsten disulfide monolayers Physical Review B - Condensed Matter and Materials Physics. 92 |
Li X, Lin MW, Puretzky AA, et al. (2014) Controlled vapor phase growth of single crystalline, two-dimensional GaSe crystals with high photoresponse. Scientific Reports. 4: 5497 |