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Liwang Ye, Ph.D.

Affiliations: 
2014 Physics, Applied University of Maryland, Baltimore County, Baltimore, MD, United States 
Area:
Atomic Physics, Nanoscience, Materials Science Engineering
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"Liwang Ye"
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Theodosia Gougousi grad student 2014 UMBC
 (Surface reactions during the atomic layer deposition of high-kappa dielectrics on III-V semiconductor surfaces.)

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Publications

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Ye L, Kropp JA, Gougousi T. (2017) In situ infrared spectroscopy study of the surface reactions during the atomic layer deposition of TiO2 on GaAs (100) surfaces Applied Surface Science. 422: 666-674
Ye L, Gougousi T. (2016) Diffusion and interface evolution during the atomic layer deposition of TiO2 on GaAs(100) and InAs(100) surfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34
Ye L, Gougousi T. (2014) In situ infrared spectroscopy study of the interface self-cleaning during the atomic layer deposition of HfO2on GaAs(100) surfaces Applied Physics Letters. 105
Lv Y, Xu Z, Ye L, et al. (2014) Large single crystal growth and characterization of CuX (X=Cl, Br) by temperature reduction method Journal of Crystal Growth. 402: 337-341
Ye L, Gougousi T. (2013) Indium diffusion and native oxide removal during the atomic layer deposition (ALD) of TiO2 films on InAs(100) surfaces. Acs Applied Materials & Interfaces. 5: 8081-7
Gougousi T, Ye L. (2012) Interface between atomic layer deposition Ta 2O 5 films and GaAs(100) surfaces Journal of Physical Chemistry C. 116: 8924-8931
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