Mohammed S. Hegazy, Ph.D.
Affiliations: | 2007 | Old Dominion University, Norfolk, VA, United States |
Area:
Electronics and Electrical Engineering, Materials Science Engineering, Condensed Matter PhysicsGoogle:
"Mohammed Hegazy"Mean distance: (not calculated yet)
Parents
Sign in to add mentor| Hani Elsayed-Ali | grad student | 2007 | Old Dominion University | |
| (Self-assembly and characterization of germanium quantum dots on silicon by pulsed laser deposition.) | ||||
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Publications
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| Hegazy MS, Elsayed-Ali HE. (2008) Nonthermal laser-induced formation of crystalline Ge quantum dots on Si(100) Journal of Applied Physics. 104 |
| Hegazy M, Refaat T, Abedin N, et al. (2006) Quantum-dot Infrared Photodetector Fabricated by Pulsed Laser Deposition Technique Journal of Laser Micro Nanoengineering. 1: 111-114 |
| Hegazy MS, Elsayed-Ali HE. (2006) Growth of Ge quantum dots on Si(100)-(2×1) by pulsed laser deposition Journal of Applied Physics. 99 |
| Hegazy MS, Refaat TF, Abedin MN, et al. (2005) Fabrication of Ge/Si quantum-dot infrared photodetector by pulsed laser deposition Optical Engineering. 44: 1-3 |
| Hafez MA, Hegazy MS, Elsayed-Ali HE. (2005) Indium growth on Si(100)-2 × 1 by femtosecond pulsed laser deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 23: 1681-1686 |
| Hegazy MS, Elsayed-Ali HE. (2005) Self-assembly of Ge quantum dots on Si(100)- 2×1 by pulsed laser deposition Applied Physics Letters. 86: 1-3 |
| Zayed MK, Hegazy MS, Elsayed-Ali HE. (2004) Melting and solidification of indium nanocrystals on (002) graphite Thin Solid Films. 449: 254-263 |
| Hegazy MS, Elsayed-Ali HE. (2003) Femtosecond pulsed laser deposition of Si on Si(100) Osa Trends in Optics and Photonics Series. 88: 1965-1966 |
| Hegazy MS, Elsayed-Ali HE. (2002) Observation of step-flow growth in femtosecond pulsed laser deposition of Si on Si(100)-2 × 1 Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 20: 2068-2071 |