Paul Rugheimer, Ph.D.

Affiliations: 
2004 University of Wisconsin, Madison, Madison, WI 
Area:
Condensed Matter Physics
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Max G. Lagally grad student 2004 UW Madison
 (Substrate engineering and strain effects on the growth of germanium on silicon.)
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Publications

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Zhang PP, Yang B, Rugheimer PP, et al. (2009) Influence of germanium on thermal dewetting and agglomeration of the silicon template layer in thin silicon-on-insulator Journal of Physics D: Applied Physics. 42
Cheun H, Rugheimer PP, Larson BJ, et al. (2006) Polymer light emitting diodes and poly(di- n -octylfluorene) thin films as fabricated with a microfluidics applicator Journal of Applied Physics. 100
Huang M, Rugheimer P, Lagally MG, et al. (2005) Bending of nanoscale ultrathin substrates by growth of strained thin films and islands Physical Review B - Condensed Matter and Materials Physics. 72
Tevaarwerk E, Keppel DG, Rugheimer P, et al. (2005) Quantitative analysis of electric force microscopy: The role of sample geometry Review of Scientific Instruments. 76
Evans PG, Rugheimer PP, Lagally MG, et al. (2005) Microfabricated strained substrates for Ge epitaxial growth Journal of Applied Physics. 97
Evans PG, Rugheimer PP, Roberts M, et al. (2004) Direct synchrotron x-ray microdiffraction measurements of strain and bending in micromachined silicon devices Applications of X-Rays in Mechanical Engineering 2004. 115-118
Friesen M, Rugheimer P, Savage DE, et al. (2003) Practical design and simulation of silicon-based quantum-dot qubits Physical Review B - Condensed Matter and Materials Physics. 67: 1213011-1213014
Sutter P, Sutter E, Rugheimer P, et al. (2003) Nanoscale strain and band structure engineering using epitaxial stressors on ultrathin silicon-on-insulator Surface Science. 532: 789-794
Sutter E, Sutter P, Zahl P, et al. (2003) Spontaneous transition from epitaxially constrained to equilibrium Ge nanocrystals on silicon-on-insulator (1 0 0) Surface Science. 532: 785-788
Liu F, Huang M, Rugheimer PP, et al. (2002) Nanostressors and the nanomechanical response of a thin silicon film on an insulator. Physical Review Letters. 89: 136101
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