Ben R. Torralva, Ph.D.

Affiliations: 
2001 Texas A & M University, College Station, TX, United States 
Area:
Condensed Matter Physics, Biochemistry, Optics Physics
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"Ben Torralva"
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Parents

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Roland E. Allen grad student 2001 Texas A & M
 (Photophysics and photochemistry of molecules.)
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Publications

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Abere MJ, Yalisove SM, Torralva B. (2019) Alignment of morphology during high spatial frequency periodic structure formation in GaAs Journal of Applied Physics. 126: 143102
Ahn M, Sarracino A, Ansari A, et al. (2019) Surface morphology and straight crack generation of ultrafast laser irradiated β-Ga2O3 Journal of Applied Physics. 125: 223104
Ahn M, Cahyadi R, Wendorf J, et al. (2018) Low damage electrical modification of 4H-SiC via ultrafast laser irradiation Journal of Applied Physics. 123: 145106
Cahyadi RS, Torralva B, Yalisove SM. (2018) High spatial frequency periodic structures formation on silicon using near UV femtosecond laser irradiation Applied Physics Letters. 112: 32105
Abere MJ, Torralva B, Yalisove SM. (2016) Periodic surface structure bifurcation induced by ultrafast laser generated point defect diffusion in GaAs Applied Physics Letters. 108: 153110
Schrider KJ, Torralva B, Yalisove SM. (2015) The dynamics of femtosecond pulsed laser removal of 20 nm Ni films from an interface Applied Physics Letters. 107: 124101
Rittman DR, Tracy CL, Cusick AB, et al. (2015) Ultrafast laser and swift heavy ion irradiation: Response of Gd<inf>2</inf>O<inf>3</inf> and ZrO<inf>2</inf> to intense electronic excitation Applied Physics Letters. 106
Abere MJ, Chen C, Rittman DR, et al. (2014) Nanodot formation induced by femtosecond laser irradiation Applied Physics Letters. 105
Murphy RD, Torralva B, Adams DP, et al. (2014) Polarization dependent formation of femtosecond laser-induced periodic surface structures near stepped features Applied Physics Letters. 104
Murphy RD, Torralva B, Adams DP, et al. (2013) Pump-probe imaging of laser-induced periodic surface structures after ultrafast irradiation of Si Applied Physics Letters. 103
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