Joshua M. Pomeroy, Ph.D.
Affiliations: | 2002 | Cornell University, Ithaca, NY, United States |
Area:
Condensed Matter PhysicsGoogle:
"Joshua Pomeroy"Mean distance: (not calculated yet)
Parents
Sign in to add mentorJoel Brock | grad student | 2002 | Cornell | |
(Hyperthermal ion epitaxy of metal thin films.) |
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Publications
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Stambaugh C, Shakeel H, Litorja M, et al. (2020) Linking mass measured by the quartz crystal microbalance to the SI Metrologia. 57: 025002 |
Tang K, Kim HS, Ramanayaka ANR, et al. (2019) A compact, ultra-high vacuum ion source for isotopically enriching and depositing Si thin films. The Review of Scientific Instruments. 90: 083308 |
Ramanayaka AN, Tang K, Hagmann JA, et al. (2019) Use of quantum effects as potential qualifying metrics for “quantum grade silicon” Aip Advances. 9: 125153 |
Tang K, Kim HS, Ramanayaka AN, et al. (2019) A compact, UHV ion source for enriching 28Si and depositing epitaxial thin films Review of Scientific Instruments. 90 |
Ramanayaka AN, Kim HS, Tang K, et al. (2018) STM patterned nanowire measurements using photolithographically defined implants in Si(100). Scientific Reports. 8: 1790 |
Ramanayaka AN, Kim H, Hagmann JA, et al. (2018) Towards superconductivity in p-type delta-doped Si/Al/Si heterostructures Aip Advances. 8: 075329 |
Dwyer KJ, Kim HS, Simons DS, et al. (2017) Temperature dependent 29Si incorporation during deposition of highly enriched 28Si films. Physical Review Materials. 1 |
Wei H, Pomeroy J. (2016) Application of the double paddle oscillator for quantifying environmental, surface mass variation. Metrologia. 53: 869-880 |
Dwyer KJ, Pomeroy JM, Simons DS, et al. (2014) Enriching 28Si beyond 99.9998 % for semiconductor quantum computing Journal of Physics D: Applied Physics. 47 |
Lake RE, Sosolik CE, Pomeroy JM. (2013) Classical over-the-barrier model for neutralization of highly charged ions above thin dielectric films Physical Review a - Atomic, Molecular, and Optical Physics. 87 |