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Nalin R. Parikh

Affiliations: 
University of North Carolina, Chapel Hill, Chapel Hill, NC 
Area:
Condensed Matter Physics
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"Nalin Parikh"
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Agajan Suvkhanov grad student 2001 UNC Chapel Hill
Igor O. Usov grad student 2002 UNC Chapel Hill

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Hashimoto N, Hunn JD, Parikh N, et al. (2005) Helium retention of ion-irradiated and annealed tungsten foils Fusion Science and Technology. 47: 881-885
Gilliam SB, Gidcumb SM, Forsythe D, et al. (2005) Helium retention and surface blistering characteristics of tungsten with regard to first wall conditions in an inertial fusion energy reactor Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 241: 491-495
Gilliam SB, Gidcumb SM, Parikh NR, et al. (2005) Retention and surface blistering of helium irradiated tungsten as a first wall material Journal of Nuclear Materials. 347: 289-297
Hashimoto N, Hunn JD, Parikh NR, et al. (2005) Microstructural analysis on helium retention of ion-irradiated and annealed tungsten foils Journal of Nuclear Materials. 347: 307-313
Adekore BT, Usov I, Patnaik B, et al. (2003) Damage Mechanisms of Ion Implanted Bulk (0001) ZnO Single Crystals. Mrs Proceedings. 792
Usov I, Parikh N, Kudriavtsev Y, et al. (2003) GaN evaporation and enhanced diffusion of Ar during high-temperature ion implantation Journal of Applied Physics. 93: 5140-5142
Usov I, Parikh N, Thomson DB, et al. (2002) Effect Of Implantation Temperature On Damage Accumulation In Ar - Implanted GaN Mrs Internet Journal of Nitride Semiconductor Research. 7
Usov IO, Parikh NR, Thomson D, et al. (2002) Reverse-annealing phenomenon during the high-temperature implantation of Ar+ into GaN Materials Research Society Symposium - Proceedings. 693: 641-646
Suvkhanov A, Parikh N, Usov IO, et al. (2000) Influence of Annealing Conditions on Dopant Activation of Si+ and Mg+ Implanted GaN Materials Science Forum. 1615-1618
Suvkhanov A, Hunn J, Wu W, et al. (1998) Doping of GaN by Ion Implantation: Does it Work? Mrs Proceedings. 512: 475
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