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Sarah J. Paukstis, Ph.D.

Affiliations: 
2000 Georgia Institute of Technology, Atlanta, GA 
Area:
Molecular Physics, Physical Chemistry
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"Sarah Paukstis"
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James L. Gole grad student 2000 Georgia Tech
 (The spectroscopy of small silicon clusters, silicon-2X (X = nitrogen,oxygen).)

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Publications

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Paukstis SJ, Gole JL, Dixon DA, et al. (2002) The ionization potential of Si2N and Si2O Journal of Physical Chemistry A. 106: 8435-8441
Winstead CB, Paukstis SJ, Gole JL. (1995) What is the ionization potential of silicon dimer? Chemical Physics Letters. 237: 81-85
Winstead CB, Paukstis SJ, Gole JL. (1995) Spectroscopy of the H3Σ-u Electronic State of Si2 Using a Combined Laser Vaporization-REMPI and Oven-Based LIF Study Journal of Molecular Spectroscopy. 173: 311-332
Winstead CB, Paukstis SJ, Walters JL, et al. (1995) Multiphoton ionization of Ag2: Assessment of a new excited electronic state and resolution of the Ag2 ionization potential The Journal of Chemical Physics. 102: 1877-1881
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