Richard Zallen
Affiliations: | Virginia Polytechnic Institute and State University, Blacksburg, VA, United States |
Area:
Condensed Matter PhysicsGoogle:
"Richard Zallen"Mean distance: (not calculated yet)
Children
Sign in to add traineeMark W Holtz | grad student | Virginia Tech | |
Wantana Songprakob | grad student | 2001 | Virginia Tech |
Sathon Vijarnwannaluk | grad student | 2002 | Virginia Tech |
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Publications
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Zallen R, Moret MP. (2006) The optical absorption edge of brookite TiO |
Zallen R. (2004) Effect of pressure on optical properties of crystalline As 2S3 High Pressure Research. 24: 117-118 |
Songprakob W, Zallen R, Tsu DV, et al. (2002) Intervalenceband and plasmon optical absorption in heavily doped GaAs:C Journal of Applied Physics. 91: 171-177 |
Liu WK, Lubyshev DI, Specht P, et al. (2000) Properties of carbon-doped low-temperature GaAs and InP grown by solid-source molecular-beam epitaxy using CBr4 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 1594-1597 |
Songprakob W, Zallen R, Liu WK, et al. (2000) Infrared studies of hole-plasmon excitations in heavily-doped p-type MBE-grown GaAs:C Physical Review B - Condensed Matter and Materials Physics. 62: 4501-4510 |
Gonzalez RJ, Zallen R, Berger H. (1997) Infrared reflectivity and lattice fundamentals in anatase TiO2 Physical Review B - Condensed Matter and Materials Physics. 55: 7014-7017 |
Sauncy T, Holtz M, Zallen R. (1994) Effect of pressure on a defect-related band-resonant vibrational mode in implanation-disordered GaAs Physical Review B. 50: 10702-10705 |
Doss CJ, Zallen R. (1993) Raman studies of sol-gel alumina: Finite-size effects in nanocrystalline AlO(OH) Physical Review B. 48: 15626-15637 |
Li YB, Ferguson IT, Stradling RA, et al. (1992) Raman scattering by plasmon-phonon modes in highly doped n-InAs grown by molecular beam epitaxy Semiconductor Science and Technology. 7: 1149-1154 |
Zallen R. (1992) Optical studies of nanocrystalline GaAs: a review Journal of Non-Crystalline Solids. 141: 227-232 |