Heungman Park, Ph.D.
Affiliations: | 2010 | Vanderbilt University, Nashville, TN |
Area:
Optics PhysicsGoogle:
"Heungman Park"Mean distance: (not calculated yet)
Parents
Sign in to add mentor| Norman H. Tolk | grad student | 2010 | Vanderbilt | |
| (Second harmonic generation in silicon/silicon dioxide systems.) | ||||
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Publications
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| Park H, Qi J, Xu Y, et al. (2013) Corrigendum: Polarization-dependent temporal behaviour of second harmonic generation in Si/SiO2 systems Journal of Optics. 15: 079501 |
| Park H, Choi B, Steigerwald A, et al. (2013) Annealing effect in boron-induced interface charge traps in Si/SiO 2 systems Journal of Applied Physics. 113 |
| Park H, Qi J, Xu Y, et al. (2011) Polarization-dependent temporal behaviour of second harmonic generation in Si/SiO2systems Journal of Optics. 13: 055202 |
| Qi J, Yan JA, Park H, et al. (2010) Mechanical and electronic properties of ferromagnetic Ga 1-xMnxAs using ultrafast coherent acoustic phonons Physical Review B - Condensed Matter and Materials Physics. 81 |
| Park H, Xu Y, Varga K, et al. (2010) Photon energy threshold for filling boron induced charge traps in SiO2 near the Si/SiO2 interface using second harmonic generation Applied Physics Letters. 97: 202105 |
| Park H, Qi J, Xu Y, et al. (2010) Boron induced charge traps near the interface of Si/SiO2 probed by second harmonic generation Physica Status Solidi (B). 247: 1997-2001 |
| Park H, Qi J, Xu Y, et al. (2009) Characterization of boron charge traps at the interface of Si/SiO2 using second harmonic generation Applied Physics Letters. 95: 062102 |
| Lu X, Pasternak R, Park H, et al. (2008) Temperature-dependent second- and third-order optical nonlinear susceptibilities at the Si/ SiO2 interface Physical Review B - Condensed Matter and Materials Physics. 78 |
| Park H, Dickerson JH, Weiss SM. (2008) Spatially localized one-dimensional porous silicon photonic crystals Applied Physics Letters. 92 |