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Prakash R. Poudel, Ph.D.

Affiliations: 
2011 University of North Texas, Denton, TX, United States 
Area:
Condensed Matter Physics
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"Prakash Poudel"
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Floyd D. McDaniel grad student 2011 University of North Texas
 (Ion beam synthesis of carbon assisted nanosystems in silicon based substrates.)

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ROUT B, DHOUBHADEL MS, POUDEL PR, et al. (2014) ION BEAM MATERIALS ANALYSIS AND MODIFICATIONS AT keV TO MeV ENERGIES AT THE UNIVERSITY OF NORTH TEXAS International Journal of Modern Physics: Conference Series. 27: 1460147
Poudel PR, Poudel PP, Paramo JA, et al. (2014) Structural and optical properties of 70-keV carbon ion beam synthesized carbon nanoclusters in thermally grown silicon dioxide Applied Physics a: Materials Science and Processing. 118: 717-723
Pandey B, Poudel PR, Singh AK, et al. (2013) Ion beam synthesis and carrier dynamics of ZnO nanoparticles embedded in a SiO2 matrix Applied Physics a: Materials Science and Processing. 112: 801-806
Poudel PR, Paramo JA, Poudel PP, et al. (2012) Effects of thermal annealing on the structural and optical properties of carbon-implanted SiO2. Journal of Nanoscience and Nanotechnology. 12: 1835-42
Poudel PR, Paramo JA, Poudel PP, et al. (2012) Effects of thermal annealing on the structural and optical properties of carbon-implanted SiO 2 Journal of Nanoscience and Nanotechnology. 12: 1835-1842
Pandey B, Poudel PR, Weathers DL. (2012) Formation of ZnO nanoparticles by ZnO- and O- dual beam ion implantation and thermal annealing Japanese Journal of Applied Physics. 51
Poudel PR, Poudel PP, Sharma BP, et al. (2012) Synthesis of buried layers of β-SiC in Si by multiple energy carbon ion implantations and post thermal annealing Thin Solid Films. 524: 35-38
Poudel PR, Poudel PP, Rout B, et al. (2012) An XPS study to investigate the dependence of carbon ion fluences in the formation of buried SiC Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 283: 93-96
Poudel PR, Rout B, Diercks DR, et al. (2011) Effects of thermal annealing on the formation of buried β-SiC by ion implantation Journal of Electronic Materials. 40: 1998-2003
Poudel PR, Rout B, Diercks DR, et al. (2011) Fluence dependant formation of β-SiC by ion implantation and thermal annealing Applied Physics a: Materials Science and Processing. 104: 183-188
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