Mikhail Daraselia, Ph.D.
Affiliations: | 2002 | University of Illinois at Chicago, Chicago, IL, United States |
Area:
Condensed Matter Physics, Materials Science EngineeringGoogle:
"Mikhail Daraselia"Mean distance: (not calculated yet)
Parents
Sign in to add mentor| Sivalingham Sivananthan | grad student | 2002 | University of Illinois, Chicago | |
| (In-situ ellipsometry monitoring of MBE grown cadmium zinc telluride(211)boron/silicon(211) and cadmium telluride(211)boron/silicon(211) structures.) | ||||
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Publications
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| Zandian M, Scott D, Gaknett J, et al. (2005) Ten-inch molecular beam epitaxy production system for HgCdTe growth Journal of Electronic Materials. 34: 891-897 |
| Carmody M, Pasko JG, Edwall D, et al. (2004) Long wavelength infrared, molecular beam epitaxy, HgCdTe-on-Si diode performance Journal of Electronic Materials. 33: 531-537 |
| Daraselia M, Grein CH, Rujirawat S, et al. (1999) In-situ monitoring of temperature and alloy composition of Hg1-xCdxTe using FTIR spectroscopic techniques Journal of Electronic Materials. 28: 743-748 |
| Kim CC, Chen YP, Daraselia M, et al. (1997) Reflectivity difference spectroscopy study of thin film ZnSe grown on GaAs by molecular beam epitaxy Journal of Crystal Growth. 175: 328-333 |