Osama O. Awadelkarim

Affiliations: 
Pennsylvania State University, State College, PA, United States 
Area:
Materials Science Engineering, Electronics and Electrical Engineering, General Physics
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"Osama Awadelkarim"
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Publications

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Khawaji IH, Awadelkarim OO, Lakhtakia A. (2019) Effects of constant-voltage stress on the stability of Parylene-C columnar microfibrous thin films Ieee Transactions On Dielectrics and Electrical Insulation. 26: 270-275
Khawaji IH, Chindam C, Awadelkarim OO, et al. (2017) Dielectric Properties of and Charge Transport in Columnar Microfibrous Thin Films of Parylene C Ieee Transactions On Electron Devices. 64: 3360-3367
Khawaji IH, Chindam C, Orfali W, et al. (2015) Electrical studies on Parylene-C columnar microfibrous thin films Ecs Transactions. 69: 113-119
Suliman SA, Awadelkarim OO, Hao J, et al. (2014) High-temperature reverse-bias stressing of thin gate oxides in power transistors Ecs Transactions. 64: 45-52
Hao J, Rioux M, Suliman SA, et al. (2014) High temperature bias-stress-induced instability in power trench-gated MOSFETs Microelectronics Reliability. 54: 374-380
Sarpatwari K, Awadelkarim OO, Passmore LJ, et al. (2011) Low-frequency three-terminal charge pumping applied to silicon nanowire field-effect transistors Ieee Transactions On Nanotechnology. 10: 871-874
Hao J, Rioux M, Awadelkarim OO. (2011) Observation of negative bias temperature instabilities in parasitic p-channel MOSFETs occurring during high-temperature reverse-bias stressing of trench-gated n-channel MOSFETs Ieee International Integrated Reliability Workshop Final Report. 129-132
Sarpatwari K, Mohney SE, Awadelkarim OO. (2011) Effects of barrier height inhomogeneities on the determination of the Richardson constant Journal of Applied Physics. 109
Passmore LJ, Awadelkarim OO, Cusumano JP. (2010) High-sensitivity tracking of MOSFET damage using dynamic-mode transient measurements Ieee Transactions On Instrumentation and Measurement. 59: 1734-1742
Sarpatwari K, Dellas NS, Awadelkarim OO, et al. (2010) Extracting the Schottky barrier height from axial contacts to semiconductor nanowires Solid-State Electronics. 54: 689-695
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