Christoph Steinbruchel
Affiliations: | 1975- | Materials Science | Rensselaer Polytechnic Institute, Troy, NY, United States |
Area:
Materials Science Engineering, Electronics and Electrical Engineering, Fluid and Plasma PhysicsGoogle:
"Christoph Steinbruchel"Mean distance: (not calculated yet)
Children
Sign in to add traineeBradley Howard | grad student | 1989-1993 | RPI (Chemistry Tree) |
Lyndon W. Graham | grad student | 2000 | RPI |
Arun Karamcheti | grad student | 2000 | RPI |
Gusung Kim | grad student | 2000 | RPI |
Huseyin Kizil | grad student | 2002 | RPI |
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Publications
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Kizil H, Steinbrüchel C. (2004) TiN, TaN and W |
Graham L, Steinbrüchel C, Duquette DJ. (2002) Nucleation and Growth of Electrochemically Deposited Copper on TiN and Copper from a Cu NH 3 Bath Journal of the Electrochemical Society. 149 |
Karamcheti A, Watt VHC, Al-Shareef HN, et al. (2002) Characterization of ultrathin gate dielectrics formed by in-situ steam generation with Nitrogen postprocessing Journal of Electronic Materials. 31: 124-128 |
Kizil H, Kim G, Steinbrüchel C, et al. (2001) TiN and TaN diffusion barriers in copper interconnect technology: Towards a consistent testing methodology Journal of Electronic Materials. 30: 345-348 |
Mallikarjunan A, Murarka SP, Steinbruchel C, et al. (2000) Electrical behavior of Cu thin fluorinated PECVD oxide MIS capacitors Journal of the Electrochemical Society. 147: 3502-3507 |
Kim SE, Steinbrüchel C. (1999) The interaction of metals and barrier layers with fluorinated silicon oxides Solid-State Electronics. 43: 1019-1023 |
Tacito RD, Steinbrüchel C. (1996) Patterning of Benzocyclobutene by Reactive Ion Etching Journal of the Electrochemical Society. 143: 2695-2697 |
Tacito RD, Steinbrüchel C. (1996) Fine‐Line Patterning of Parylene‐n by Reactive Ion Etching for Application as an Interlayer Dielectric Journal of the Electrochemical Society. 143: 1974-1977 |
Steinbrüchel C. (1995) Patterning of copper for multilevel metallization: reactive ion etching and chemical-mechanical polishing Applied Surface Science. 91: 139-146 |